Grounding loop structure of radio frequency CMOS integration inductance

Abstract

The invention discloses an earthing ring structure in a radio frequency CMOS integrated inductor. The earthing ring consists of an active area and a first layer of metal, wherein the active area and the first layer of metal are disconnected so as to form a disconnected opening of the earthing ring. The earthing ring structure makes the periphery of the inductor not form a closed circuit through disconnecting the active area and the upper connected metal of the earthing ring so as to reduce consumption of energy of a magnetic field on the earthing ring, thereby avoiding substantial descending of Q value. The earthing ring structure ensures a certain Q value without increasing area of the inductor or extra manufacturing cost on the premise that anti-noise capability is improved.

Description

technical field [0001] The invention relates to a structure of a radio frequency inductance element model, in particular to a grounding ring structure in a radio frequency CMOS integrated inductance. Background technique [0002] RF CMOS (Complementary Metal Oxide Semiconductor) integrated inductor is one of the important components of RF CMOS integrated circuits, and its substrate is susceptible to noise interference that affects the performance of the entire circuit. Introducing the ground ring into the integrated inductor model can effectively improve the anti-noise ability of the integrated inductor. [0003] Most of the grounding rings used in the currently applied RF component libraries are closed rings. According to Ampere's law, the magnetic field of the integrated inductor will induce current on the closed ground ring, causing a part of energy loss on the ground ring, thereby reducing its inductance Q value (quality factor). Q=2π*energy storage / energy dissipation....

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