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Overlay precision control method and apparatus

A technology of overlay accuracy and control method, which is applied in the field of photolithography technology, and can solve the problems of increasing the control complexity of the APC system and increasing the storage capacity of the APC system.

Active Publication Date: 2009-06-17
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If more exposure machines are used, the number of overlay precision control processes will increase, which is equal to the number of exposure machines of company (factory) A multiplied by the number of exposure machines of company (factory) B, overlay The increase in the number of precision control processes not only increases the storage capacity of the APC system, but also increases the complexity of the APC system control

Method used

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  • Overlay precision control method and apparatus

Examples

Experimental program
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no. 1 example

[0053] figure 2 It is a flow chart of the control method of overlay accuracy in this embodiment. In this embodiment, the photolithography process of the front and rear layers is completed across the factory area, that is, the photolithography process of the front and rear layers is completed by different factory areas of the same company. Different exposure machines can be used in the factory area, or the same exposure machine can be used.

[0054] Please refer to figure 2 , Company A’s factory area Aa uses the exposure machine A1 to perform the front-layer photolithography process on the wafer, and then, the company A’s factory area Ab uses the exposure machine A2 to perform the current layer photolithography process on the wafer.

[0055] In step S21, the factory area Ab first needs to obtain the photolithography process conditions of the previous layer photolithography process from the factory area Aa before using the exposure machine A2 to perform the current layer phot...

no. 2 example

[0077] Figure 4 It is a flow chart of the control method of overlay accuracy in this embodiment. In this embodiment, the lithography process of the front and rear layers is completed across companies, that is, the lithography process of the front and rear layers is completed by different companies, and different companies can use Different exposure machines can also use the same exposure machine.

[0078] Please refer to Figure 4 , company A uses exposure machine A2 to perform the front-layer lithography process on the wafer, and then company B uses exposure machine B1 to perform the current-layer lithography process on the wafer.

[0079] In step S41, before using the exposure machine B1 to perform the current layer photolithography process, company B first needs to obtain the photolithography process conditions of the previous layer photolithography process from company A. That is to say, after company A uses the exposure machine A2 to complete the lithography process of...

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PUM

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Abstract

The invention relates to a method for controlling alignment precision and a device thereof. The method for controlling the alignment precision comprises: acquiring photoetching process conditions of an anterior layer of photoetching process; calculating error introduced by the technical process according to the photoetching process conditions of the anterior layer of photoetching process, and calculating a technical compensation value of a current-layer exposure stand the calculated error introduced by the technical process according to the photoetching process conditions of the anterior layer of photoetching process; and controlling the current-layer exposure stand to carry out photoetching process according to the calculated technical compensation value of the current-layer exposure stand. The method for controlling the alignment precision and the device thereof can reduce the position alignment error of photoetching patterns among layers of a wafer, so as to accurately control the alignment precision.

Description

technical field [0001] The invention relates to a photolithography process, in particular to a control method and device for overlay precision. Background technique [0002] Photolithography is a process of transferring mask patterns to wafers through a series of steps such as alignment and exposure. In the manufacturing process of semiconductor chips, the entire manufacturing process is usually completed through a multi-layer photolithography process. How to control It is a crucial step in the multi-layer lithography process when the lithographic pattern of the first layer is aligned with the lithographic pattern of the previous layer (pattern on the wafer) to meet the requirements of overlay accuracy. The overlay accuracy is Refers to the alignment error between the wafer layer and the photolithographic pattern of the layer. [0003] At present, most manufacturing companies use Advanced Process Control (APC, Advanced Process Control) systems for photolithography to meet t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
Inventor 杨晓松
Owner SEMICON MFG INT (SHANGHAI) CORP