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Encapsulation structure and manufacturing method for high power light-emitting diode chip

A technology of light-emitting diodes and packaging structures, applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve problems such as non-thermal conductive materials and inapplicability

Inactive Publication Date: 2013-01-16
张秀梅 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this packaging structure is that the reflector frame 130 and the light-transmitting resin 160 around the LED chip 140 except for the electrode 120 are not good heat-conducting materials, so the heat emitted by the LED chip 140 mainly passes through and relies on thinner electrodes. 120 to the outside, this packaging method is not suitable for packaging of high-power light-emitting diode chips

Method used

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  • Encapsulation structure and manufacturing method for high power light-emitting diode chip
  • Encapsulation structure and manufacturing method for high power light-emitting diode chip
  • Encapsulation structure and manufacturing method for high power light-emitting diode chip

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Embodiment Construction

[0026] Figures 2a and 2b show a side sectional view and an exploded view of a first embodiment of the present invention. As shown in the figure, a packaging structure of a high-power LED chip that can be surface mounted in this embodiment at least includes a packaging frame 200 formed by integral molding of metal materials and insulating materials, a LED chip 240, and a LED chip connected to the LED chip. A plurality of wires 250 for the positive and negative electrodes and a light-transmitting filler 260. The metal material of the packaging frame 200 respectively constitutes a heat dissipation carrier 210 and a plurality of electrodes 220 located around the heat dissipation carrier; the insulating material is filled between the heat dissipation carrier and the plurality of electrodes, and a hollow reflector frame 230 is formed above it.

[0027] The heat dissipation carrier 210 is located at the center of the bottom of the packaging frame 200. The upper surface plane is expos...

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Abstract

The invention provides an encapsulating structure of a high-power diode chip which can be mounted on surface and a manufacturing method thereof. The encapsulating structure is mainly characterized in that an encapsulating frame loading an LED (light-emitting diode) chip, conducting wires and a light admitting encapsulating body is a structure constituted by metal materials and insulating materials in an integrating way. The metal materials respectively constitute a heat radiating carrier and a plurality of electrodes positioned at the periphery of the heat radiating carrier. The upper flat surface of the heat radiating carrier is used for gluing and fixing the LED chip and the lower flat surface is used for being connected with an external heat radiator; the upper flat surfaces of the electrodes are connected with the electrodes of the LED chip by conducting wires and the lower flat surface thereof is the external electrode of the LED. The insulating materials are filled between the heat radiating carriers and the electrodes fully and a hollow baffle-board frame is formed above the insulating materials simultaneously.

Description

technical field [0001] The invention relates to a light-emitting semiconductor device, in particular to a package structure and a manufacturing method of a high-power light-emitting diode chip. Background technique [0002] FIG. 1 is a side cross-sectional view of a conventional LED chip packaging structure. As shown in FIG. 1 , the packaging structure is composed of a lead frame, LED chips 140 , wires 150 , and translucent resin 160 . The lead frame is composed of a reflector frame 130 and electrodes 120 . The LED chip 140 is glued on the planar chip carrier on the lead frame, and the positive and negative electrodes of the LED chip are connected to the power supply through the wire 150 and the external electrode 120 on the lead frame. The light-emitting diode chip 140 is surrounded by a reflector frame 130 , and finally the light-transmitting resin is used to seal the light-emitting diode chip 140 and the wires 150 . The disadvantage of this packaging structure is that ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/00H01L25/075H01L23/34H01L23/488H01L21/50H01L33/00
CPCH01L24/97H01L2224/48091H01L2224/48247H01L2924/12041
Inventor 张秀梅龚家胤
Owner 张秀梅