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Rapid detection method of silicon chip

A detection method and technology of silicon wafers, applied in the direction of optical testing flaws/defects, etc., can solve problems such as waste of manpower and material resources, achieve convenient detection, reduce misjudgment, and speed up the effect

Inactive Publication Date: 2011-05-04
BEIJING KEEVEN PRECISION MACHINERY +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Surface and subsurface defects of solar silicon wafers, such as defects, impurities, saw marks, cracks, especially hidden cracks (cracks that cannot be detected visually), the prior art mainly tests the electrical parameters of solar silicon wafers, this Testing is generally carried out at the later stage of the production process, so that the unqualified silicon wafers produced in the early production will remain in the production line until they are finally discovered, resulting in a waste of manpower and material resources

Method used

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  • Rapid detection method of silicon chip
  • Rapid detection method of silicon chip
  • Rapid detection method of silicon chip

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Embodiment Construction

[0020] A kind of quick detection method of silicon chip, comprises the following steps:

[0021] (1) Two digital cameras 1 and 2 take images of two silicon wafers respectively, and the images taken by the two cameras are respectively f 0 (x, y) and g 0 (x, y);

[0022] (2) Calculate f respectively through the image center calculation modules 3 and 4 0 (x, y) and g 0 Image center (f xc , f yc ) and (g xc , g yc );

[0023] f xc = Σ x = 0 M - 1 Σ y = 0 N - 1 x · f 0 ( x , y ) ΔxΔy / Σ x = 0 ...

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Abstract

The invention discloses a rapid detection method of silicon chip, using two digital cameraa to take image of two silicon chips separately, and obtaining defects covering area by analysis, comparison and calculation. The invention has convenient and real-time detection with few erroneous judgement and fast speed.

Description

Technical field: [0001] The invention relates to a rapid detection method for a silicon wafer. Background technique: [0002] Surface and subsurface defects of solar silicon wafers, such as defects, impurities, saw marks, cracks, especially hidden cracks (cracks that cannot be detected visually), the prior art mainly tests the electrical parameters of solar silicon wafers, this The test is generally carried out at the later stage of the production process, so that the unqualified silicon wafers produced in the early production will remain in the production line until they are finally discovered, resulting in a waste of manpower and material resources. Invention content: [0003] The purpose of the present invention is to provide a quick detection method for silicon wafers which is convenient for detection and can be detected in real time. [0004] Technical solution of the present invention is: [0005] A kind of rapid detection method of silicon chip is characterized in...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/88
Inventor 周乔治
Owner BEIJING KEEVEN PRECISION MACHINERY