Technique for improving the performance and extending the lifetime of an ion source with gas dilution

Abstract

A technique improving the performance and extending the lifetime of an ion source with gas dilution is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for improving performance and extending lifetime of an ion source in an ion implanter with gas dilution. The method may comprise releasing a predetermined amount of dopant gas into an ion source chamber, and releasing a predetermined amount of dilutant gas into the ion source chamber. The dilutant gas may comprise a mixture of a xenon- containing gas and a hydrogen-containing gas for diluting the dopant gas to improve the performance and extend the lifetime of the ion source.

Description

technical field [0001] The present disclosure relates generally to semiconductor manufacturing equipment, and more particularly to techniques for improving performance and extending lifetime of ion sources with gas dilution. Background technique [0002] Ion implantation is the process of depositing chemicals into a substrate by directly bombarding the substrate with excited ions. In semiconductor manufacturing, ion implanters are mainly used to change the type and conductivity level of the target material in the doping process. Precise doping profiles in integrated circuit (IC) substrates and their thin film structures are often critical for proper IC performance. In order to achieve a desired doping profile, one or more ionic species may be implanted at different doses and at different energy levels. [0003] FIG. 1 shows a prior art ion implanter system 100 . As is typical for most ion implanter systems, system 100 is housed in a high vacuum environment. The ion impla...

AI Technical Summary

Problems solved by technology

Arc chamber enclosure 202 material may eventually deposit on the surface of cathode 208, resulting in degradation of electron emission from the surface of cathode 208

[0014] It should be appreciated that while the issue of germanium ion implantation has been discussed above, other fluorine-containing dopant gases such as boron trifluoride (BF3 sub>), phosphorus trifluoride (PF3), and silicon tetrafluoride (SiF4)) may exhibit similar problems: as these deposited on the cathode 208 material results that adversely affect the performance and lifetime of the ion source 102

Since sputtering is dominated by the heaviest ions in the plasma 20, the sputtering effect may worsen as the ion mass increases

In effect, continued sputtering of material "thinns" the cathode 208 and may eventually result in holes or openings in the cathode 208

Therefore, when using a dopant gas containing a heavier element such as germanium (Ge), arsenic (As), xenon (Xe) as opposed to a lighter element such as boron (B) or carbon (C), greatly Reduced efficiency and lifetime of ion source 102

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