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Light emitting diode (LED) packaging structure with electrostatic protection function and manufacturing method thereof

A technology of light-emitting diodes and electrostatic protection, applied in circuits, electrical components, electrical solid devices, etc., and can solve problems such as damage

Inactive Publication Date: 2011-07-27
IND TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] It is worth noting that although light emitting diodes have many of the above advantages, they are often damaged due to abnormal voltage or electrostatic discharge (electro-static discharge; ESD)

Method used

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  • Light emitting diode (LED) packaging structure with electrostatic protection function and manufacturing method thereof
  • Light emitting diode (LED) packaging structure with electrostatic protection function and manufacturing method thereof
  • Light emitting diode (LED) packaging structure with electrostatic protection function and manufacturing method thereof

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Embodiment Construction

[0050] see Figure 1A to Figure 1G , is a schematic flowchart of each step of the manufacturing method of the light emitting diode package structure with electrostatic protection function according to the first embodiment of the present invention. First, if Figure 1A As shown, a composite substrate 108 is provided, and the composite substrate 108 is composed of a first silicon substrate 102 , an insulating layer 104 and a second silicon substrate 106 . Wherein, the first silicon substrate 102 can be a P-type semiconductor silicon substrate or an N-type semiconductor silicon substrate, and the thickness of the first silicon substrate 102 is 0.1 μm to 500 μm. The thickness of the aforementioned first silicon substrate 102 can be flexibly adjusted according to the requirement, for example, the thickness can be 0.1 micron to 0.3 micron, or 400 micron to 500 micron.

[0051] Subsequently, a first photoresist layer 110 a and a second photoresist layer 110 b are respectively forme...

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Abstract

The invention discloses a light emitting diode (LED) packaging structure with electrostatic protection function and a manufacturing method thereof. A special composite base plate is used for preparing burned diodes and LEDs, and an insulating layer in the composite base plate is used for insulating individual burned diodes in an array structure, so that an LED device has electrostatic protection function. The invention also discloses an electrostatic protection system of the LED.

Description

technical field [0001] The invention relates to a packaging structure of a light emitting diode, in particular to a packaging structure of a light emitting diode with electrostatic protection and a manufacturing method thereof. Background technique [0002] The light-emitting diode composed of elemental compound semiconductor materials is a widebandgap light-emitting element, which can emit light covering almost all wavelength bands, and because the luminous efficiency of light-emitting diodes continues to improve, light-emitting diodes are used in some It has gradually replaced fluorescent lamps and incandescent bulbs in the field, such as the backlight of liquid crystal displays or general lighting devices. In addition, light-emitting diodes not only have the advantages of good luminous efficiency, but also have the advantages of small size, low power consumption, and long life. Therefore, they have been widely used in home appliances, computers and their peripheral produc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L25/16H01L23/488H01L21/50H01L21/60
CPCH01L2224/16225H01L2224/48091H01L2224/48227
Inventor 石志聪许镇鹏杜冠洁胡鸿烈陈炳儒黄世才蔡欣芸
Owner IND TECH RES INST