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Al-doped alpha-phase silicon nitride (alpha-Si3N4)-based material and preparation method thereof

A phase silicon nitride, -si3n4 technology, applied in the field of materials science, can solve very few problems

Active Publication Date: 2011-04-27
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, silicon nitride is rarely used as a solid-state optoelectronic material due to its huge band gap (5.1eV)

Method used

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  • Al-doped alpha-phase silicon nitride (alpha-Si3N4)-based material and preparation method thereof
  • Al-doped alpha-phase silicon nitride (alpha-Si3N4)-based material and preparation method thereof
  • Al-doped alpha-phase silicon nitride (alpha-Si3N4)-based material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] First, take 0.600g of finely ground silicon monoxide powder and 0.173g of aluminum powder and mix them evenly, put the mixed powder into the raw material area of ​​the high-frequency graphite induction furnace, seal the quartz cover, and then vacuum. Subsequently, nitrogen gas was introduced into the furnace, and nitrogen gas with a flow rate of 800 ml / min was continuously introduced, and the furnace was maintained at an atmospheric pressure. Turn on the induction furnace, observe the temperature of the raw material area, control the temperature of the raw material area at 1620℃, the output power of the induction furnace is about 9kw, turn off the induction furnace after heating for 30 minutes, and maintain a constant flow of nitrogen throughout the reaction process. After cooling, open the quartz cover and take out the graphite furnace. Finally, a white reaction product was obtained in the deposition area at 1500°C when the graphite furnace was heated.

[0025] The resul...

Embodiment 2

[0027] First, take 0.600g of finely ground silicon monoxide powder and 0.173g of aluminum powder and mix them evenly, put the mixed powder into the raw material area of ​​the high-frequency graphite induction furnace, seal the quartz cover, and then vacuum. Subsequently, nitrogen gas was introduced into the furnace, and nitrogen gas with a flow rate of 800 ml / min was continuously introduced, and the furnace was maintained at an atmospheric pressure. Turn on the induction furnace, observe the temperature of the raw material area, control the temperature of the raw material area at 1620℃, the output power of the induction furnace is about 9kw, turn off the induction furnace after heating for 60 minutes, and keep a constant flow of nitrogen throughout the reaction process. After cooling, open the quartz cover and take out the graphite furnace. Finally, a white reaction product was obtained in the deposition area at 1500°C when the graphite furnace was heated.

[0028] The resulting...

Embodiment 3

[0030] First, take 0.600g of finely ground silicon monoxide powder and 0.173g of aluminum powder and mix them evenly, put the mixed powder into the raw material area of ​​the high-frequency graphite induction furnace, seal the quartz cover, and then vacuum. Subsequently, nitrogen gas was introduced into the furnace, and nitrogen gas with a flow rate of 800 ml / min was continuously introduced, and the furnace was maintained at an atmospheric pressure. Turn on the induction furnace, observe the temperature of the raw material area, control the temperature of the raw material area at 1620℃, the output power of the induction furnace is about 9kw, turn off the induction furnace after heating for 60 minutes, and keep a constant flow of nitrogen throughout the reaction process. After cooling, open the quartz cover and take out the graphite furnace. Finally, a white reaction product was obtained in the deposition area at 1300°C when the graphite furnace was heated.

[0031] The obtained ...

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Abstract

The invention relates an Al-doped alpha-phase silicon nitride (alpha-Si3N4)-based material and an Al-doped alpha-phase silicon nitride (alpha-Si3N4)-based material which is further doped with rare earth element europium, and a preparation method thereof. The optical bandwidth of the Al-doped alpha-phase silicon nitride (alpha-Si3N4)-based material is greatly reduced to about 2.64eV as compared with that of a pure silicon nitride so that the application of the material in semiconductor photoelectric elements can be possible; the Al-doped alpha-phase silicon nitride (alpha-Si3N4)-based material which is doped with rare earth element Eu exhibits a yellow-orange emission spectrum of which the center is 582nm and the peak width at half height is 100nm and the material has excellent luminescence performance so that the application of the material in semiconductor solid-state illumination can be possible.

Description

Technical field [0001] The invention belongs to the field of materials science, and specifically relates to silicon nitride-based materials, and more specifically to aluminum-doped α-phase silicon nitride (α-Si 3 N 4 ) Base material and its preparation method. Background technique [0002] Nitride as a solid-state lighting material has many advantages: thermal stability, high performance, long life, safety and non-toxicity. Such materials have caused great changes in solid-state microelectronic materials in the past few decades. However, most of the experimental research is focused on III semiconductor nitrides (such as GaN, InN and Al-Ga-In-N, etc.). The common feature of them is the visible light range where the band gap is easy to use: from InN's 1.9eV (red) to GaN's 3.4eV (ultraviolet) [Ponce, FAand DPBour, NItride-based semiconductors for blue and green light-emitting devices. Nature, 1997.386(6623): p.351-359.]. However, both Ga and In are scarce resources, so the cost o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/30C23C16/44C09K11/80
Inventor 祝迎春刘真
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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