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Display device and method for manufacturing the same

An area, p-type technology, applied in the direction of radiation control devices, static indicators, instruments, etc., can solve the problems of output characteristic deviation, diffusion concentration deviation, photodiode output characteristic deviation, etc., and achieve the effect of suppressing the deviation of output characteristics

Inactive Publication Date: 2010-03-24
SHARP KK
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As a result, the output characteristics of the photodiode vary
In addition, the greater the number of ion implantations, the greater the variation in diffusion concentration, resulting in greater variation in output characteristics

Method used

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  • Display device and method for manufacturing the same
  • Display device and method for manufacturing the same
  • Display device and method for manufacturing the same

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Embodiment Construction

[0023] An active matrix substrate according to an embodiment of the present invention includes an n-type thin film transistor, a p-type thin film transistor, and a photodiode, wherein the n-type thin film transistor includes an n-type semiconductor region formed as a source region, A silicon film having an n-type semiconductor region as a drain region and a p-type semiconductor region as a channel region, wherein the p-type thin film transistor has a p-type semiconductor region as a source region and a p-type semiconductor region as a drain region and a silicon film of an n-type semiconductor region as a channel region, the photodiode includes a silicon film formed with a p-type semiconductor region, an intrinsic semiconductor region, and an n-type semiconductor region, and the p-type semiconductor region and n-type semiconductor region of the photodiode are The region is arranged so as to sandwich the intrinsic semiconductor region in the surface direction of the silicon film ...

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Abstract

Provided is an active matrix substrate wherein fluctuation of output characteristics of a photodiode is suppressed. A display device using such active matrix substrate is also provided. An active matrix substrate (1) provided with an n-TFT (20), a p-TFT (30) and a photodiode (10) is used. The photodiode (10) is provided with a p-layer (7), an i-layer (8) and an n-layer (9). The i-layer (8) has a p-type semiconductor region (8a) wherein the p-type impurity diffusion concentration is set to be equivalent to the p-type impurity diffusion concentration of a channel region (23) of the n-TFT (20), at a position adjacent to the p-layer (7). The i-layer also has an n-type semiconductor region (8b) wherein the n-type impurity diffusion concentration is set to be equivalent to the n-type impurity diffusion concentration of a channel region (33) of the p-TFT (30), at a position adjacent to the n-layer (9).

Description

technical field [0001] The present invention relates to a display device including a photodiode and a manufacturing method thereof. Background technique [0002] In the field of display devices represented by liquid crystal display devices, in order to adjust the brightness of the display screen corresponding to the intensity of the light around the display device (hereinafter referred to as "external light"), it has been proposed to install light in the display device. sensor method. Mounting the photosensor on the display device can be performed by mounting the photosensor as a discrete component on the display panel. In addition, in the case of a liquid crystal display device, the photosensor can be integrally formed on the active matrix substrate by utilizing the active element (TFT) or the formation process of the peripheral circuit. [0003] Among them, especially in the field of display devices for portable terminal devices, from the viewpoint of reduction in the nu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/10G02F1/133H01L27/146H01L29/786
CPCH04N1/028G02F2001/13312G09G2300/0408H04N1/00127G02F1/1368G02F1/135H01L27/3244H04N2201/0081G09G2300/0434H01L27/1214G09G2310/0235H01L27/156G09G2300/0809G09G3/3208H04N1/00129H01L31/1055H04N1/486H01L27/12G09G3/3648H04N1/02805G02F1/13312
Inventor 加藤浩巳B·J·哈德文
Owner SHARP KK
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