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Integrating method of hybrid integrated circuit with controllable working temperature

A technology of hybrid integrated circuits and integrated methods, applied in the direction of temperature control, circuits, electrical components, etc., to achieve the effect of improving long-term reliability, broad market prospects, and good temperature stabilization

Inactive Publication Date: 2011-03-23
GUIZHOU ZHENHUA FENGGUANG SEMICON
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide an integration method of a temperature-controllable hybrid integrated circuit to solve the technical problem that semiconductor devices can operate stably for a long time under different ambient temperatures

Method used

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  • Integrating method of hybrid integrated circuit with controllable working temperature
  • Integrating method of hybrid integrated circuit with controllable working temperature
  • Integrating method of hybrid integrated circuit with controllable working temperature

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Embodiment

[0013] The FH10 high-temperature-resistant integrated operational amplifier developed by Guizhou Zhenhua Scenic Semiconductor Co., Ltd. is mainly used in the aviation field. It is matched with sensors to process and amplify sensor signals. The typical working environment temperature is 150 ° C ~ 175 ° C. 200°C.

[0014] The core part of the device is a conventional small and medium-power MOS high-impedance input operational amplifier chip, which generates little heat during normal operation and is mainly used for signal acquisition, processing and amplification in high-temperature environments. The maximum operating temperature of the chip is 125°C. Therefore, the integration technology of semiconductor thermoelectric refrigeration and conventional hybrid integrated circuit of the present invention is used for integration. The specific process is as follows:

[0015] (1) Selection of ceramic substrate: In order to facilitate the rapid transfer of heat and match the thermal ex...

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Abstract

The invention discloses an integrating method of a hybrid integrated circuit with controllable working temperature. The method comprises the steps of integrating a common hybrid integrated circuit on the right side of a frontal base aluminium nitride ceramics substrate, integrating a semiconductor freezer on the back of the frontal base aluminium nitride ceramics substrate, respectively leading out connecting lines from two ends of a N type semiconductor and a P type semiconductor, bonding, and connecting the whole circuit. A thermal resistor, which is clinging to a temperature-sensitive semiconductor core, is provided in the device for detecting the inner working temperature of device. An exterior controllable switch circuit and the current direction are controlled by tracking the changeof the resistor to check the change of the voltage at two ends of the resistor and to control temperature by controlling the frequency of increasing or decreasing temperature. The integrated circuit of the invention is widely applied to the fields such as space flight, aviation, ship, precise instrument, geological exploration, oil exploration, communication, industrial control, etc. The invention has an expansive market prospect.

Description

technical field [0001] The present invention relates to an integrated circuit, more specifically, to a hybrid integrated circuit with controllable operating temperature, and in particular to an integration method of the hybrid integrated circuit. Background technique [0002] In the original hybrid circuit integration technology, the thick film substrate or thin film substrate is directly mounted on the shell base, and then semiconductor chips and chip components are mounted on the thick film substrate or thin film substrate, and then Bonding wire (gold wire or silicon-aluminum wire) is used to complete the entire circuit connection, and finally the tube base and tube cap are sealed in a specific atmosphere. The working environment temperature of the device is: civilian grade 0℃~70℃, industrial grade -25℃~85℃, military grade -55℃~125℃. Within the temperature range specified by the device, the functions and performance specified by the device are realized. The main problem ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/50H01L21/60H01L21/48G05D23/24
CPCH01L2924/0002
Inventor 杨成刚苏贵东殷坤文
Owner GUIZHOU ZHENHUA FENGGUANG SEMICON
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