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Measurement method of base resistance of bipolar transistor

A technology of bipolar transistors and measurement methods, which is applied in the direction of measuring devices, measuring electrical variables, measuring resistance/reactance/impedance, etc., can solve the problem of inability to accurately extract extrinsic resistance connection resistance and inability to accurately extract connection resistance Rlink And other issues

Active Publication Date: 2013-03-27
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
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Problems solved by technology

figure 1 The structure shown can only extract the intrinsic resistance Rsh and the extrinsic resistance Rx of the base region, but cannot accurately extract the connection resistance Rlink
With the continuous improvement of manufacturing technology, the feature size of bipolar transistors is continuously reduced, and the connection resistance plays an increasingly important role. It is impossible to accurately extract the connection resistance Rlink and Contact resistance Rcx

Method used

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  • Measurement method of base resistance of bipolar transistor
  • Measurement method of base resistance of bipolar transistor
  • Measurement method of base resistance of bipolar transistor

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Embodiment Construction

[0028] In order to better understand the technical content of the present invention, specific embodiments are given together with the attached drawings for description as follows.

[0029] figure 2 It is a top view of the base region and the emitter region of the base region resistance measurement structure of the bipolar transistor in a preferred embodiment of the present invention; image 3 Shown is a cross-sectional view of the resistance measuring structure in a preferred embodiment of the present invention.

[0030] Please refer to figure 2 with image 3 , the measurement structure described here is a bipolar transistor, including an emitter E, a base B, and a collector C. Four metal leads B1 to B4 are drawn from the base B, and are symmetrically distributed on both sides of the emitter E. side.

[0031] The width of the emission area E is b, and the effective length L is figure 2 shown. The distance between the edge of the emitter region E and the edges of the m...

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Abstract

The invention provides measurement structure and method of a base resistance of a bipolar transistor. The measurement method comprises the steps of: designing a plurality of bipolar transistor measurement structures with different emitter region widths b; in measurement, zero-offsetting an emitter electrode and a collector electrode of each measurement structure, connecting four metal leading out terminals of a base by using a testing Kelvin resistance mode, applying an excitation current I and measuring a voltage drop Vbb; fitting a curve by using Delta Vbb / I as ordinates and Delat b / L as abscissas according to the formula of Delta Vbb / I=Rsh*Delta b / L+Rlink, wherein L is the effective length of an emitter region, slope of the curve is an intrinsic square resistance Rsh of a base and intercept is a connecting resistance Rlink of the base; zero-offsetting the emitter region and a collector region of each measurement structure, respectively applying voltages of Vbe+Delta V and Vbe-Delta V to the two metal leading out terminals closest to the emitter region, measuring the current I flowing through the base; and fitting a curve according to the formula of 2Delta V / Delta I=Rsh*Delta b / L+Rx, wherein the intercept is a non-intrinsic resistance Rx of the base. The base contact resistance is Rx-Rlink.

Description

technical field [0001] The invention relates to a measuring structure and a measuring method for measuring resistance, and more particularly relates to a measuring method for measuring base region resistance of a bipolar transistor. Background technique [0002] figure 1 Shown is the known basic structure for extracting the intrinsic resistance of the base region and the extrinsic resistance of the base region; including the emitter region E and the base region B. The resistance between the edge of the emitter region E and the metal lead of the base region B is defined as the connection resistance. [0003] The resistance of the base region B includes intrinsic resistance and extrinsic resistance, wherein the extrinsic resistance of the base region B includes two parts: contact resistance and connection resistance Rlink (link resistance). figure 1 The shown structure can only extract the intrinsic resistance Rsh and the extrinsic resistance Rx of the base region, but canno...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R27/08
Inventor 王兵冰许丹
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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