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High-voltage vertical transistor with a varied width silicon pillar

A field-effect transistor, high-voltage technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of harmful on-state performance of devices and increase in on-state resistance

Inactive Publication Date: 2013-09-18
POWER INTEGRATIONS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the reduction in doping and the increase in length of the extended drain region have detrimental effects on the on-state performance of the device, both causing an increase in the on-state resistance

Method used

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  • High-voltage vertical transistor with a varied width silicon pillar
  • High-voltage vertical transistor with a varied width silicon pillar
  • High-voltage vertical transistor with a varied width silicon pillar

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Experimental program
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Embodiment Construction

[0036] Specific details are set forth in the following description, such as material types, dimensions, structural features, process steps, etc., in order to provide a thorough understanding of the disclosure herein. However, it will be understood by those skilled in the art that these specific details are not required to practice the described embodiments. It should also be understood that elements in the drawings are representative and have not been drawn to scale for the sake of clarity.

[0037] figure 2 An example pattern of silicon pillars 10 for a vertical HVFET is shown. figure 2 The top view of shows one end of a continuous, growing, racetrack-shaped ring (eg, torus or ellipse) structure comprising a column of semiconductor material surrounded on the opposite side by a dielectric region. Arranged on either side of the pillar 10 within the dielectric region are gate members and conductive field plates, respectively. Although not in the figure 2 shown in , but th...

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PUM

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Abstract

In one embodiment, a vertical HVFET includes a pillar of semiconductor material a pillar of semiconductor material arranged in a loop layout having at least two substantially parallel and substantially linear fillet sections each having a first width, and at least two rounded sections, the rounded sections having a second width narrower than the first width, a source region of a first conductivity type being disposed at or near a top surface of the pillar, and a body region of a second conductivity type being disposed in the pillar beneath the source region. First and second dielectric regions are respectively disposed on opposite sides of the pillar, the first dielectric region being laterally surrounded by the pillar, and the second dielectric region laterally surrounding the pillar. First and second field plates are respectively disposed in the first and second dielectric regions.

Description

technical field [0001] The present disclosure relates to field effect semiconductor transistor structures that can withstand high voltages. Background technique [0002] High voltage field effect transistors (HVFETs) are well known in semiconductor technology. The device structure used by many HVFETs includes an extended drain region that carries or blocks the applied high voltage (eg, several hundred volts) when the device is in the "off" state. This type of HVFET is commonly used in power conversion applications such as AC / DC converters for off-line power poles, motor control, etc. These devices can switch at high voltages and achieve high blocking voltages in the off state while minimizing current resistance in the "on" state. This blocking or breakdown voltage is often abbreviated as Vbd or BV. The acronym Rds refers to the product of resistance and surface area in this extended drain region and is commonly used to describe the on-state performance of the device. [...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06H01L29/812H01L29/872H01L29/861H01L29/739H01L29/70
CPCH01L29/872H01L29/0657H01L29/7813H01L29/7802H01L29/0696H01L29/4238H01L29/7397H01L29/407
Inventor 苏吉特·巴纳吉维杰伊·帕塔萨拉蒂朱林
Owner POWER INTEGRATIONS INC