Polymeric barrier removal polishing slurry

A slurry, gravimetric technology, applied in polishing compositions containing abrasives, other chemical processes, chemical instruments and methods, etc., can solve problems such as insufficient barrier removal rate
CN101760137AInactive Publication Date: 2010-06-30ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
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Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Applications(China)
Current Assignee / Owner
ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
Publication Date
2010-06-30
Estimated Expiration
Not applicable ยท inactive patent

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Abstract

The aqueous slurry is useful for chemical mechanical polishing semiconductor substrates having copper interconnects. The slurry includes by weight percent, 0 to 25 oxidizing agent, 1 to 50 abrasive particles, 0.001 to 10 inhibitor for decreasing static etch of the copper interconnects, 0.001 to 5 poly (methyl vinyl ether) having a formula as follows: and the poly (methyl vinyl ether) is water soluble and n has a value of at least 5, 0 to 10 copper complexing agent formed during polishing and balance water.
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Description

technical field

[0001] The present invention relates to an aqueous slurry that can be used to chemically mechanically polish a semiconductor substrate containing copper interconnects and a method for chemically mechanically polishing a semiconductor substrate containing copper interconnects using the aqueous slurry. Background technique

[0002] With the development of Ultra Large Scale Integration (ULSI) technology towards smaller line widths, new challenges are presented for the integration of conventional chemical mechanical polishing (CMP) methods. Additionally, the introduction of low-k and ultra-low-k dielectric films requires the use of gentler CMP processes due to the low mechanical strength of these films and their poor adhesion to adjacent layers. In addition, increasingly stringent specifications for defects place additional demands on polishing slurries for low-k films.

[0003] Incorporating various low-k films into ULSI may require many additional steps and al...

Claims

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