Capacitance coupling type radiofrequency plasma source

A capacitive coupling, radio frequency technology, used in circuits, discharge tubes, electrical components, etc.

Active Publication Date: 2010-07-07
IND TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the standing wave effect is still unavoidable

Method used

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  • Capacitance coupling type radiofrequency plasma source
  • Capacitance coupling type radiofrequency plasma source
  • Capacitance coupling type radiofrequency plasma source

Examples

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Embodiment Construction

[0044] In order to further illustrate the features, purposes and functions of the present invention, the relevant detailed structure and design concept of the device of the present invention will be described below, and the detailed description is as follows:

[0045] see figure 2 , which is a schematic diagram of a radio frequency plasma source according to the first embodiment of the present invention. In the second figure, the capacitively coupled radio frequency plasma source 2 includes: a first input port 21, a second input port 22, a first impedance adjuster 23, a second impedance adjuster 24, an impedance matching circuit 25 and a radio frequency power supply 26. In detail, the first input port 21 and the second input port 22 are respectively coupled to a rectangular electrode 201 . The rectangular electrode 201 is arranged parallel to another grounded rectangular electrode 202 to accommodate a plasma cavity (not shown in the figure). A first impedance adjuster 23 a...

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Abstract

The invention discloses a capacitance coupling type radiofrequency plasma source which is a large area capacitance coupling type radiofrequency plasma source and enables radiofrequency power to be input in a double port mode by only using a radiofrequency power provider. In addition, input impedance of each port can be individually regulated to be used for eliminating standing wave effect and achieve the uniformization of plasma.

Description

technical field [0001] The present invention relates to a capacitively coupled radio frequency plasma source, especially a large-area capacitively coupled radio frequency plasma source, which uses only one radio frequency power supply to input radio frequency power in a dual-port manner, and each The input impedance of the ports can be adjusted individually to eliminate the standing wave effect and achieve plasma homogenization. Background technique [0002] As the glass substrate area of ​​thin-film solar cells continues to expand, the area of ​​the large-area plasma source must also expand accordingly. Therefore, if the standing wave effect of the large-area plasma source can be effectively eliminated, then the core technology of the large-area plasma source has also been mastered. [0003] The large-area plasma source is a plasma process equipment applied to the Plasma-Enhanced Chemical Vapor-phase Deposition (PECVD) process of thin-film solar cells (especially thin-film...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01J31/18H05H1/46C23C16/44
Inventor 张志振吴东权罗展兴吴庆辉黄振荣梁沐旺张家豪
Owner IND TECH RES INST
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