Data recovery in solid state memory devices

Abstract

Embodiments herein provide data recovery techniques and configurations for solid state memory devices. For example, a method includes identifying a hard error associated with a cell of a solid state memory device, providing a location of the cell having the identified hard error to a decoder to recover data originally programmed to the cell, and recovering the data originally programmed to the cell using the decoder. Other embodiments may be described and / or claimed.

Description

technical field [0001] Embodiments of the invention relate generally to memory devices, and more particularly to data recovery techniques in solid-state memory devices. Background technique [0002] In solid-state memory, such as flash memory, data is typically stored in an array of memory cells using charge traps or isolation regions of the memory cells. For example, in a single-level memory cell (SLC) device, each of the memory cells can store one bit of information, or in a multi-level memory cell (MLC) device, each of the memory cells can store multiple on one bit of information. The measured threshold voltage of the memory cell generally corresponds to the value of the data stored on the memory cell. [0003] Data loss in solid state memory can occur for a number of reasons including, for example, wear of the memory cell material and charge leakage. When such data loss is caused by memory cell degradation, a shift in threshold voltage may occur, which leads to data r...

AI Technical Summary

Problems solved by technology

Multiple re-reads and subsequent ECC decoding may not work, for example, because decoding failures may be caused by write errors

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