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Leakage detecting method of process chamber

A technology of leak detection and process chamber, which is applied in the field of leak detection and can solve the problems of inability to accurately control the range of leak detection specifications

Inactive Publication Date: 2011-09-07
SEMISYSCO CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When this distribution increases slightly, the specification range for leak detection cannot be precisely controlled

Method used

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  • Leakage detecting method of process chamber
  • Leakage detecting method of process chamber

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Embodiment Construction

[0030] Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

[0031] figure 1 is a schematic diagram illustrating a type of leak detection within a process chamber according to an exemplary embodiment of the present invention.

[0032] refer to figure 1 , when a defect factor of a process chamber during a semiconductor manufacturing process is reduced by repeatedly performing preventive maintenance (PM) at a predetermined time, a state of a part may change significantly. In this case, a leak may be detected even if it did not occur. A leak detection method of a process chamber according to an exemplary embodiment of the present invention is performed to avoid such detection errors, and includes first to fourth steps.

[0033] The first step consists in searching for effective wavelength bands (wavelength bands) that contribute to leakage among the plasma light emissions of several sampled glasses introduc...

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Abstract

Provided is a leakage detecting method of a process chamber, in which the ranges of a warning spec, a fault spec, and a PM spec for leakage detection having an effect upon leakage after PM is performed are expanded for a predetermined period or time until plasma is stabilized, considering that the states of parts significantly change before and after the PM is performed. Therefore, it is possibleto accurately and quickly judge whether or not leakage occurs in a process chamber and to detect minute leakage.

Description

technical field [0001] The present invention relates to a leak detection method, more specifically, to a leak detection method in a process chamber, which can be used to detect special Accurately and quickly detect whether a leak occurs in the process chamber. Background technique [0002] Semiconductor manufacturing processes using plasma can be roughly classified into dry etching processes, chemical vapor deposition processes, and sputtering processes. [0003] Semiconductor manufacturing devices using plasma are classified into: capacitively coupled plasma (capacitively coupled plasma, CCP) type device, an inductively coupled plasma (ICP) type device that generates plasma by applying RF power to a coil outside the reaction tube, and a magnetically enhanced reactive ion etching device that generates plasma by coupling RF power and a magnetic field (magnetically enhanced reactive ion etching, MERIE) type devices and electron cyclotron resonance (ECR) type devices that gen...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66
CPCH01L21/67288
Inventor 李淳钟禹奉周金学权金泰东
Owner SEMISYSCO CO LTD