Unlock instant, AI-driven research and patent intelligence for your innovation.

Base plate, semiconductor packaging piece applying same and manufacture method of base plate

A manufacturing method and substrate technology, which can be used in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., and can solve problems such as large volume, reduced structural strength of sheet materials, and inability to effectively reduce volume.

Active Publication Date: 2012-04-18
ADVANCED SEMICON ENG INC
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the traditional base material is a whole piece of plastic substrate, which has a thick thickness and a large volume, so that the volume of the final semiconductor package cannot be effectively reduced.
Moreover, the formation of through-holes on the base material will also reduce the structural strength of the board
In this case, in order to maintain the structural strength of the substrate, it is necessary to select a thicker substrate, which will make the volume of the traditional semiconductor package unable to be effectively reduced

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Base plate, semiconductor packaging piece applying same and manufacture method of base plate
  • Base plate, semiconductor packaging piece applying same and manufacture method of base plate
  • Base plate, semiconductor packaging piece applying same and manufacture method of base plate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0058] The following preferred embodiments are proposed as an illustration of the present invention, but the content of the embodiments is only for illustration purposes, and the drawn drawings are for illustration purposes, and are not used to limit the protection scope of the present invention. Furthermore, the illustrations of the embodiments also omit unnecessary components to clearly show the technical characteristics of the present invention.

[0059] Please also refer to Figure 1A and Figure 1B , Figure 1A A cross-sectional view illustrating a semiconductor package according to a preferred embodiment of the present invention, Figure 1B draw Figure 1A Bottom view of the patterned wiring layer. in, Figure 1A The cross-sectional direction of the patterned wiring layer 112 Figure 1B Direction 1A-1A' in.

[0060] Such as Figure 1A As shown, the semiconductor package 100 includes a substrate 102 , a plurality of solder balls 106 , a plurality of bonding wires 110 ,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a base plate, a semiconductor packaging piece applying the same and a manufacture method of the base plate. The base plate comprises a patterning line layer, a first dielectric protection layer, a metal shielding layer, a metal supporting layer and a second dielectric protection layer. The patterning line layer is provided with a groove as well as a first face and a second face which are opposite, wherein the groove penetrates through the second face from the first face, the first face is provided with a plurality of first junctions and a plurality of second junctions, and the first junctions are adjacent to the groove. The first dielectric protection layer is formed on the first face and exposes the first junctions and the second junctions. The second dielectric protection layer is formed on the second face and exposes the groove. The metal supporting layer is burned in the first dielectric protection layer, and the metal shielding layer is clamped between the metal supporting layer and the patterning line layer.

Description

technical field [0001] The present invention relates to a substrate, a semiconductor package using the same and a manufacturing method thereof, and in particular to a substrate with a support structure that can be strengthened, a semiconductor package using the same and a manufacturing method thereof. Background technique [0002] A conventional substrate includes a base material, an upper patterned circuit layer and a lower patterned circuit layer and has through holes. In order to increase the laying area of ​​the circuit on the substrate and increase the number of I / O contacts, the upper patterned circuit layer and the lower patterned circuit layer are respectively formed on two opposite surfaces of the base material, and are electrically connected to each other through conducting through holes. A chip can be disposed on the substrate to form a semiconductor package with the substrate. [0003] However, the traditional base material is a whole piece of plastic substrate,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/498H01L23/13H01L23/14H01L21/48
CPCH01L2924/15311H01L2224/4824H01L2924/3025H01L2224/73215H01L2224/32225
Inventor 李俊哲黄士辅李达钧陈姿慧
Owner ADVANCED SEMICON ENG INC