Flip-chip type light-emitting diode capable of eliminating surge and static and manufacturing method thereof
A light-emitting diode and surge technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of increasing the manufacturing cost of flip-chip light-emitting diodes, and achieve the effect of reducing volume and cost and eliminating electrostatic discharge.
Active Publication Date: 2015-04-01
EPISKY
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Problems solved by technology
Among them, the protection circuit is used to protect the flip-chip light-emitting diode, so as to avoid the instantaneous voltage generated by static electricity from affecting the light-emitting diode chip, but the protection circuit increases the volume of the flip-chip light-emitting diode, and with the increase of the volume, the flip-chip LED increases relatively. The cost of manufacturing light-emitting diodes
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[0099] First, see figure 2 , which is a schematic structural view of a preferred embodiment of the present invention. As shown in the figure, a flip-chip light-emitting diode that can eliminate surges and static electricity of the present invention includes a first substrate 100, a first conductive component 112, a second conductive component 114, an anti-surge protection Layer 116, a light emitting diode chip 120 and a plurality of conductors 130, wherein the light emitting diode chip 120 includes a first electrode 122, a second electrode 124 and a second substrate 126, and the first electrode 122 and the second electrode 124 are respectively The first electrode 122 is connected to the first conductive component 112 through the conductor 130 , and the second electrode 124 is connected to the second conductive component 114 through the conductor 130 . When the light-emitting diode chip 120 is used to drive the light-emitting diode chip 120 to emit light through the bias volt...
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The invention discloses a flip-chip type light-emitting diode capable of eliminating surge and static and manufacturing method thereof. One flip-chip type light-emitting diode packaging structure thereof includes a first substrate, a first conductive component, a second conductive component, a surge-resistant protection layer and a light-emitting diode chip. The manufacturing method includes that the first substrate is firstly formed, then the first conductive component and the second conductive component are formed on the first substrate, then the surge-resistant protective layer is formed on the first substrate and covers partial first conductive component and second conductive component, and finally the first conductive component and the second conductive component are utilized to joint the light-emitting diode chip. When the bias voltage of the light-emitting diode chip is more than threshold voltage, the first conductive component, the surge-resistant protective layer and the second conductive component generate a current bypass, so as to eliminate surge and static.
Description
technical field [0001] The invention relates to a light-emitting diode structure and a preparation method thereof, in particular to a flip-chip light-emitting diode capable of eliminating surges and static electricity and a manufacturing method thereof. Background technique [0002] Nowadays, the research and development technology of Light Emitting Diode (LED) is becoming more and more sophisticated, and because of the small working voltage and small size of LEDs, LEDs are a kind of optoelectronic components that are in great demand in the optoelectronic industry today, and they can be used in lighting , Light sources and backlight modules for portable lighting appliances, among which the research and development of backlight modules is the most popular. In order to reduce the unit volume occupied by the LED packaging structure as much as possible during the packaging process, the optoelectronic industry has developed a flip-chip LED packaging structure to reduce the occupi...
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IPC IPC(8): H01L33/00
Inventor 黄国钦潘锡明杨志伟简奉任
Owner EPISKY