Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing originated multi-section yttrium vanadate laser crystal

A laser crystal, multi-stage technology, used in crystal growth, chemical instruments and methods, single crystal growth, etc., can solve the problems of unguaranteed crystal quality, adverse effects of crystal application, inability to observe and effectively control, and achieve fewer interface defects. Effect

Active Publication Date: 2012-03-28
FUJIAN CASTECH CRYSTALS
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The problem with this approach is that Nd 3+ :YVO 4 Crystal thermal shock problems
The problem with this method is that it cannot be observed and effectively controlled during the growth process, and the quality of the grown crystals is not guaranteed. At the same time, due to the OH - Under the condition of high temperature and high pressure, it is easy to enter the inside of the crystal, which will have a bad influence on the application of the crystal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] 1) LiVO prepared and purified in advance 3 and YVO 4 Powder raw materials, according to the molar ratio "YVO 4 : Flux = 10:90 ", take 500g of mixed raw materials in total, fully mix the raw materials and put them into a platinum crucible with a diameter of 60mm and a height of 60mm; put the platinum crucible into the growth furnace;

[0038] 2) Raise the temperature at a rate of 50°C / h to completely melt the raw material, then keep the temperature at a temperature 30°C higher than the melting point for 24 hours to homogenize the melt; then slowly lower the temperature to the estimated growth temperature;

[0039] 3) will YVO 4 The small crystal seed crystal is fixed on the crystal rod and slowly lowered to the liquid level. Through trial and error, the temperature at which the seed crystal does not melt and does not grow is determined, and this temperature point is the growth temperature;

[0040] 4) Take out the seed crystal, raise the temperature of the melt by 30°...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for preparing an originated multi-section yttrium vanadate laser crystal. By utilizing a flux growth method, an undoped yttrium vanadate crystal with a certain thickness is grown at two ends of a rare earth-doped yttrium vanadate laser crystal so as to prepare the multi-section yttrium vanadate laser crystal. The surface adsorption of the prepared undoped crystalor neodymium-doped crystal is less than 2,150ppm / cm, and the crystal can meet the application requirement of high-power lasers.

Description

technical field [0001] The present invention relates to a method for preparing primary multi-segment yttrium vanadate laser crystals, in particular to growing non-doped yttrium vanadate crystals with a certain thickness on both ends of rare earth-doped yttrium vanadate laser crystals by means of a flux method , thus preparing multi-segment yttrium vanadate laser crystals. Background technique [0002] Neodymium-doped yttrium vanadate (Nd:YVO 4 ) crystal as an excellent laser crystal has attracted people's attention since the 1960s. It has a zircon structure with space group D 19 4h -I4 1 / amd. It has high optical transmittance in the range of 400-5000nm. It has excellent mechanical properties, excellent chemical stability and high laser damage threshold (3.3±0.4GW / cm 2 ), is an excellent laser host material. with Nd 3+ :YAG compared to Nd 3+ :YVO 4 The absorption bandwidth at the semiconductor pump wavelength (λ=808nm) is Nd 3+ : 2.4 times of YAG, suitable for pu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/00C30B29/30
Inventor 吴少凡
Owner FUJIAN CASTECH CRYSTALS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products