Double-layer crucible for growing silicon single crystals by directional solidification method

Abstract

The invention discloses a double-layer crucible for growing silicon single crystals by a directional solidification method, which comprises an outer crucible and an inner crucible nested into the outer crucible, wherein the inner crucible comprises an inner crucible main body and an inner crucible bottom; the outer crucible comprises an outer crucible main body and an outer crucible bottom; the inner crucible bottom is provided with a seed crystal sleeve for placing seed crystals; the outer crucible bottom is provided with an anti-leakage cavity; an anti-leakage agent is placed in the anti-leakage cavity; and the internal cavity of the inner crucible main body is communicated with the anti-leakage cavity through the internal cavity of the seed crystal sleeve. The anti-leakage agent is notreacted with silicon and is immiscible with the silicon, the density of the anti-leakage agent is more than 2.4g / cm<3>, and the melting temperature of the anti-leakage agent is less than 1,410 DEG C.The double-layer crucible can effectively solve the seed crystal placing problem, realizes silicon single crystal growth by the directional solidification method, meanwhile can furthest prevent molten silicon from leaking from the seed crystal sleeve, has low cost and a simple structure, and is easy to process.

Description

technical field [0001] The invention relates to a device for manufacturing silicon single crystals, in particular to a container for placing silicon raw materials in a thermal field for growing silicon single crystals by directional solidification, that is, a crucible for growing silicon single crystals by directional solidification. Background technique [0002] Silicon single crystal and silicon polycrystalline ingot are the most commonly used materials for crystalline silicon solar cells. Generally, solar cells manufactured using silicon single crystal materials have higher photoelectric conversion efficiency than solar cells manufactured using silicon polycrystalline materials. At present, the most commonly used manufacturing methods for silicon single crystal are pulling method (Czochralski method) and zone melting method (Floating Zone method); the manufacturing method for silicon polycrystal usually adopts directional solidification method (ie casting method). The di...

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Problems solved by technology

[0004] The invention provides a double-layer crucible for growing silicon single crystal by directional solidification method, which can effectively solve the problem of placing the seed crystal, avoid the dislocation of the seed crystal during the seeding process, and completely solve the problem of the patent No. ZL 200920115886.9 The silicon melt leakage problem that is not completely solved in the Chinese utility model patent

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