Double-layer crucible for growing silicon single crystals by directional solidification method

A double-layer crucible and silicon single crystal technology, applied in self-solidification, crystal growth, single crystal growth, etc., can solve problems such as leakage of silicon melt, achieve improved performance, easy processing, and avoid dislocation effects

Inactive Publication Date: 2012-04-25
GREENERGY CRYSTAL TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The invention provides a double-layer crucible for growing silicon single crystal by directional solidification method, which can effectively solve the problem of placing the seed crystal, avoid the dislocation of the seed crystal during the seeding process, and completely solve the problem of the patent No. ZL 200920115886.9 The silicon melt leakage problem that is not completely solved in the Chinese utility model patent

Method used

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  • Double-layer crucible for growing silicon single crystals by directional solidification method
  • Double-layer crucible for growing silicon single crystals by directional solidification method
  • Double-layer crucible for growing silicon single crystals by directional solidification method

Examples

Experimental program
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Effect test

Embodiment 1

[0036] Such as figure 2 The shown double-layer crucible for growing silicon single crystal by directional solidification method includes an outer crucible and an inner crucible, and the inner crucible is nested inside the outer crucible.

[0037] Wherein, the outer crucible is made of CFC (carbon-carbon composite) material, including the outer crucible main body 2 and the outer crucible bottom 4, and is processed between the inner and outer walls of the outer crucible bottom 4 for placing an anti-leakage agent 6 leak-proof cavity. Anti-leakage agent 6 adopts high-purity tin, and its purity is more than 99.99%. The anti-leakage agent 6 is in a liquid state when the temperature is greater than 232°C, and its density is about 7.3g / cm3, and it does not react with silicon and is immiscible even at high temperatures (1000-2000°C).

[0038] The inner crucible is made of quartz material, including a quartz inner crucible main body 1, a quartz seed crystal sleeve 7, and a quartz inn...

Embodiment 2

[0045] In the same manner as in Example 1, the difference is that the mass ratio is 1:1 of BaF 2 and BaCl 2 Mixture (powder state) as anti-leakage agent 6. BaF 2 The melting point is 1360°C and the density is 4.89g / cm 3 . BaCl 2 The melting point is 962°C and the density is 3.1g / cm 3 . Therefore, BaF with a mass ratio of 1:1 was used 2 and BaCl 2 The density of the mixture is greater than that of silicon (2.33g / cm3), and the melting point is lower than that of silicon (1415°C). At the same time, BaF 2 and BaCl 2 The melt temperature is between 1400°C and 2000°C, and it does not react with or dissolve in the silicon melt.

Embodiment 3

[0047] The same method as in Example 1 is adopted, except that the cross-sectional areas of the main body 1 of the inner crucible and the main body 2 of the outer crucible are square.

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Abstract

The invention discloses a double-layer crucible for growing silicon single crystals by a directional solidification method, which comprises an outer crucible and an inner crucible nested into the outer crucible, wherein the inner crucible comprises an inner crucible main body and an inner crucible bottom; the outer crucible comprises an outer crucible main body and an outer crucible bottom; the inner crucible bottom is provided with a seed crystal sleeve for placing seed crystals; the outer crucible bottom is provided with an anti-leakage cavity; an anti-leakage agent is placed in the anti-leakage cavity; and the internal cavity of the inner crucible main body is communicated with the anti-leakage cavity through the internal cavity of the seed crystal sleeve. The anti-leakage agent is notreacted with silicon and is immiscible with the silicon, the density of the anti-leakage agent is more than 2.4g / cm<3>, and the melting temperature of the anti-leakage agent is less than 1,410 DEG C.The double-layer crucible can effectively solve the seed crystal placing problem, realizes silicon single crystal growth by the directional solidification method, meanwhile can furthest prevent molten silicon from leaking from the seed crystal sleeve, has low cost and a simple structure, and is easy to process.

Description

technical field [0001] The invention relates to a device for manufacturing silicon single crystals, in particular to a container for placing silicon raw materials in a thermal field for growing silicon single crystals by directional solidification, that is, a crucible for growing silicon single crystals by directional solidification. Background technique [0002] Silicon single crystal and silicon polycrystalline ingot are the most commonly used materials for crystalline silicon solar cells. Generally, solar cells manufactured using silicon single crystal materials have higher photoelectric conversion efficiency than solar cells manufactured using silicon polycrystalline materials. At present, the most commonly used manufacturing methods for silicon single crystal are pulling method (Czochralski method) and zone melting method (Floating Zone method); the manufacturing method for silicon polycrystal usually adopts directional solidification method (ie casting method). The di...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B11/00
Inventor 李乔马远
Owner GREENERGY CRYSTAL TECH
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