37results about How to "Eliminate dislocations" patented technology

The invention discloses a tray capable of eliminating warping of wafers. The tray comprises a base body and bases, a plurality of concave pits are formed in one side face of the base body, and one base is arranged in each concave pit. The bases are embedded in the corresponding concave pits, gaps are kept between the bases and the bottoms of the concave pits, and the overall height of the bases is smaller than the depth of the concave pits. A plurality of air suction holes are formed in the upper surfaces of the bases, and after the wafers are sucked on the bases, the overall combined height of the wafers and the bases is smaller than the depth of the concave pits. A vacuumizing channel communicated with the air suction holes is formed in each base, and the vacuumizing channels penetrate through the lower surfaces of the bases. Air exhaust holes are formed in the bottoms of the concave pits, a vacuumizing channel communicated with the air exhaust holes is formed in the base body, and the vacuumizing channel penetrates through the other side face of the base body and can be connected with an outside vacuumizing device. According to the tray, the wafers can be flatly attached to the bases, the epitaxial wafer warping problem caused by thermal mismatch and lattice mismatch can be effectively solved, the temperature in the wafers is uniform, and the subsequent technology processes are facilitated.

The invention discloses a multi-element alloy brazing filler metal for vacuum sealing. The multi-element alloy brazing filler metal comprises the following metal elements of, in percentage by mass, 50%-63.5% of Ag, 24%-28% of Cu, 9%-14% of In, 2%-5% of Ge, 1%-2% of Ga, 0.3%-0.5% of Y, and 2%-0.5% of Ce; and the preparation method of the multi-element alloy brazing filler metal comprises the following steps of smelting, hot rolling blooming, solution treating, cold rolling, annealing and finish machining. The brazing filler metal prepared by the preparation method is low in melting point, highin cleanliness, high in tensile strength and good in oxidation resistance.

The invention provides a semiconductor structure comprising a first semiconductor material substrate, a first porous structure layer, a second porous structure layer and a second semiconductor material layer, wherein the first porous structure layer is formed on the first semiconductor material substrate; the second porous structure layer is formed on the first porous structure layer; the porosity and the aperture of the second porous structure layer are both less than the porosity and the aperture of the first porous structure layer; and the second semiconductor material layer is formed on the second porous structure layer. The invention can release the thermal mismatch stress of Si materials and epitaxial materials through the porous structure layers, prevent the problems of cracking and the like of an epitaxial film with larger thickness and enhance the quality of an epitaxial film crystal, thereby extending an epitaxial material layer (such as GaN and the like) which has large thickness and higher thermal mismatch stress with the Si materials on a Si substrate; and in addition, the porous Si materials can be removed in a subsequent process, therefore a subsequent device process can not be influenced.

The invention discloses a substrate with a self-stripping function, comprising a supporting substrate and an epitaxial layer arranged on the surface of the supporting substrate, wherein the supporting substrate has a first thermal expansion coefficient; the epitaxial layer has a second thermal expansion coefficient; the substrate further comprises a thermoplastic elastomer arranged at the interface of the supporting substrate and the epitaxial layer and has the third thermal expansion coefficient; and the function for stripping the epitaxial layer can be achieved by changing the temperature of the thermoplastic elastomer in the stripping layer. As an optional technical scheme, the third thermal expansion coefficient is smaller than the smaller one of the first thermal expansion coefficient and the second thermal expansion coefficient or greater than the greater one of first thermal expansion coefficient and the second thermal expansion coefficient. The technical scheme of the invention has the advantages of realizing the stripping process with low cost, high efficiency and no damage to the epitaxial layer.

The invention provides a semiconductor structure which comprises a first semiconductor material substrate, a first porous structure layer formed on the top layer of the first semiconductor material substrate, a second porous structure layer formed on the first porous structure layer, a graphical structure layer formed on the second porous structure layer and a second semiconductor material layer formed on the graphical structure layer, wherein the porosity and aperture of the second porous structure layer are both less than the porosity and aperture of the first porous structure layer. The thermal mismatch stress of Si material and epitaxial material can be released through the porous structure layer, the problems of cracking of an epitaxial film under relatively large thickness and the like are prevented, and the quality of the epitaxial film crystal is improved. According to the invention, a large-thickness epitaxial material layer (such as GaN and the like) in relatively large thermal mismatch stress with the Si material can be extended on the Si substrate, and the porous Si material can be removed in subsequent processes, thereby avoiding influence on the subsequent device processes.

The invention discloses a double-layer crucible for growing silicon single crystals by a directional solidification method, which comprises an outer crucible and an inner crucible nested into the outer crucible, wherein the inner crucible comprises an inner crucible main body and an inner crucible bottom; the outer crucible comprises an outer crucible main body and an outer crucible bottom; the inner crucible bottom is provided with a seed crystal sleeve for placing seed crystals; the outer crucible bottom is provided with an anti-leakage cavity; an anti-leakage agent is placed in the anti-leakage cavity; and the internal cavity of the inner crucible main body is communicated with the anti-leakage cavity through the internal cavity of the seed crystal sleeve. The anti-leakage agent is not reacted with silicon and is immiscible with the silicon, the density of the anti-leakage agent is more than 2.4g/cm<3>, and the melting temperature of the anti-leakage agent is less than 1,410 DEG C. The double-layer crucible can effectively solve the seed crystal placing problem, realizes silicon single crystal growth by the directional solidification method, meanwhile can furthest prevent molten silicon from leaking from the seed crystal sleeve, has low cost and a simple structure, and is easy to process.

A preparation method for a false tooth alloy material comprises the particular steps that (1) raw materials are put into a vacuum medium-frequency induction furnace to be melted, the heat is kept for 30-60 min, then the materials are poured into a mold and cooled for 30-40 min through cooling water to the room temperature, and a rough ingot is obtained; (2) the rough ingot is put into the vacuum medium-frequency induction furnace again, the temperature is raised to 850-870 DEG C and kept for 5-10 h, then the rough ingot is poured into a mold and cooled for 80-100 min through cooling water to the room temperature, and a fine ingot is obtained; (3) the fine ingot is subjected to aging treatment, and is firstly kept at the temperature of 200-250 DEG C for 10-12 h, then the temperature is raised to 500-570 DEG C and kept for 5-8 h, and the temperature is slowly decreased to the room temperature at the speed of 2-3 DEG C/min. The preparation method for the false tooth alloy material is high in strength, good in corrosion resistance and small in harm to the human body, thereby solving the problems that precious metal is expensive, and non-precious alloy harms the human body.

The invention provides a thermal treatment method for a formed weld joint of a drill rod. The thermal treatment method comprises the following steps that firstly, annealing treatment is carried out on a weld joint zone which is formed between a drill rod pipe body and a connector through friction welding; then the annealed drill rod is placed in air to be cooled until the drill rod is cooled to the room temperature; and finally the cooled drill rod is subjected to tempering treatment. By means of the thermal treatment method, as tempering sorbite is formed, the structure of the weld joint of the drill rod is finer, and the problem of cracks in the weld joint of the small drill rod is completely solved.

The invention discloses a secondary hot-extrusion technology of AQ80M magnesium alloy profiles. The secondary hot-extrusion technology comprises the steps: 1) performing double-stage homogenizing treatment to magnesium alloy billets after peeling; 2) heating the magnesium alloy billets to 340-420 DEG C after double-stage homogenizing pretreatment, holding the magnesium alloy billets for 1-3 h at 340-420 DEG C, performing primary hot-extrusion deformation at the extrusion ratio of 2:9 and the extrusion speed of 1.5-6 mm/s to obtain bars; 3) heating the magnesium alloy bars obtained in 3) to 340-380 DEG C, holding the magnesium alloy bars for 1-3 h at 340-380 DEG C, performing secondary hot-extrusion deformation at the extrusion ratio of 12:15 and the extrusion speed of 4-12 mm/s to obtain magnesium alloy triangular profiles; 4) performing thermal treatment to the magnesium alloy triangular profiles obtained in 3) to obtain final products. According to the secondary hot-extrusion technology disclosed by the invention, the triangular profiles with the circumscribed circle diameter of 95-108 mm and the length of at least 5000 mm can be obtained, the high-temperature tensile strength of the magnesium alloy triangular profiles after thermal treatment is >= 250 MPa, the yield strength is >= 195 MPa, and the elongation is >= 23%.

The invention provides a preparation method of a high-purity dense magnesium oxide target material based on rapid surface heat treatment. The method comprises the following steps: taking magnesium oxide powder as the raw material, taking zirconium oxide spheres as media, carrying out planetary ball milling of the raw material, and sieving the milled powder via a 200-mesh sieve; carrying out cold isostatic pressing of the sieved powder to obtain a magnesium oxide pressed blank; sintering the magnesium oxide pressed blank in vacuum, carrying out surface precision machining of the target material according to the needed target material size till the surface roughness of the target material is less than or equal to 0.8 micron after vacuum sintering is ended to obtain a magnesium oxide target material; and grinding the surface of the magnesium oxide target material, then washing and finally carrying out rapid surface heat treatment under the vacuum condition by using a continuous wave laser heat treatment method, a scanning electron beam method or a non-coherent wideband frequency light source method to obtain the high-purity dense magnesium oxide target material based on rapid surface heat treatment. The magnesium oxide target material prepared by the method is high in purity, high in density and consistent in surface layer structures and inner layer structures; and the preparation method is simple, green, environmentally-friendly and energy-saving, and is short in preparation time.

Implants are disclosed. Methods of making and using implants are also disclosed.

The invention discloses an H13 steel hard surface surfacing layer heat treatment method. H13 steel is used as a welding base body for surfacing, a prepared hard surface surfacing layer is subjected to finish machining so as to reach the size required by a mold, the machined mold is subjected to tempering treatment and air cooling to the room temperature, and a finished product is obtained. The tempering temperature ranges from 250 DEG C to 650 DEG C, and the tempering heat preservation time ranges from 0.5 h to 6 h. According to the method, the welding defects such as dislocation, welding residual stress and uneven structural components in the hard surface surfacing layer on the H13 steel surface are eliminated through post-welding tempering heat treatment. The structure and mechanical properties of the surfacing layer are improved by reasonably controlling the tempering temperature, the heat preservation time and the heating rate.

The invention discloses a nickel-titanium alloy preparation method for improving the radial stability and a medical device. A nickel-titanium alloy stent with microdefects in a preset structure is subjected to shaping and post-treatment through a multi-step heat treatment process method. The method comprises the following steps: performing annealing treatment to enable the internal structure of the nickel-titanium alloy stent to be recovered, recrystallized and shaped, eliminating the defects of dislocation and the like in the stent, enabling the internal structure of the nickel-titanium alloy stent to be uniform, and re-dissolving a Ni-rich precipitated phase; carrying out strain cycle shrinkage on the stent in the radial direction; and finally, carrying out low-temperature aging treatment on the stent, so that a nanoscale component non-uniform structure is uniformly formed in the alloy, and the anti-fatigue performance of radial cyclic shrinkage deformation of the nickel-titanium alloy stent is remarkably improved.