4results about How to "Eliminate dislocations" patented technology

This invention provides a Cr2Se3 single crystal and its preparation method, relating to the field of crystal materials technology. The Cr2Se3 single crystal preparation method, from raw material proportioning and powder preparation to single crystal growth, involves coordinated steps to suppress impurity introduction and impurity phase formation, while simultaneously promoting ordered atomic arrangement and eliminating lattice vacancies and dislocations, resulting in a Cr2Se3 single crystal with good single-phase properties, high crystallinity, and extremely low defect density. The high-purity, low-defect single crystal structure ensures its semiconductor transport properties and antiferromagnetic order; it also eliminates interference from impurity scattering and lattice distortion, optimizing the magnetic field's control over the magnetic moments of Cr atoms, enabling the single crystal to exhibit a strong CMR effect approaching -100%. Furthermore, the coordinated steps ensure consistency in size, phase composition, and structural integrity of the prepared Cr2Se3 single crystal, significantly improving the success rate, process controllability, and repeatability.

The invention discloses a tellurium-copper alloy material and a preparation method and application thereof, and the tellurium-copper alloy material comprises the following components in percentage by mass: 0.4-0.7% of Te, 0.004-0.012% of P, 0.05-0.15% of Zr, 0.01-0.05% of Cd, 0.01-0.05% of Ge, less than or equal to 9 ppm of oxygen, and the balance of copper and inevitable impurities. Wherein the tellurium-copper alloy material contains intermetallic compounds Te2Zr, TeCd and GeTe, the particle diameter of the intermetallic compounds is 1-20 nm, and the number of the intermetallic compounds per 0.1 mm < 2 > area is more than 1000. Metal zirconium, cadmium and germanium are added into the tellurium-copper alloy and react with metal tellurium to generate an intermetallic compound, enrichment of tellurium particles at the grain boundary is reduced or eliminated, and meanwhile, in the casting process, stepped heating is adopted, extrusion parameters are controlled, and the tellurium-copper alloy material with excellent machining performance and the like is obtained. The method is simple, short in process and high in production efficiency, and has wide application prospects in the fields of electronic appliances and the like.

The invention relates to the technical field of light-emitting diodes, in particular to a high-luminous-efficiency light-emitting diode epitaxial wafer growing method, which comprises the following steps: growing a substrate, growing a buffer layer on the substrate, growing a UGaN 1 layer on the substrate, growing a GR layer on the substrate, and growing an NGaN layer and an LED full-structure layer on the substrate; wherein the UGaN < 1 > layer comprises a 3D1 layer growing at a low temperature and a low growth speed, a recrystallization layer grows on the UGaN < 1 > layer, and a 3D2 layer grows on the UGaN < 1 > layer; wherein the temperature of the recrystallization layer is higher than that of the 3D1 layer, NH3 of the recrystallization layer is smaller than that of the 3D1 layer, and H2 is larger than that of the 3D1 According to the method, different atmospheres of a recrystallization layer are innovatively utilized to decompose GaN on a C surface / a non-C surface, so that the proportion of non-C-surface GaN crystals is eliminated, 3D2 high temperature and high growth speed are grown on the non-C-surface GaN crystals, mainly the C-surface GaN crystals, dislocation in contact with the non-C surface is eliminated, generation of holes is reduced by the GaN crystals grown at the top end of the patterned substrate, the lattice quality of an epitaxial material is improved, and the yield of the epitaxial material is improved. The luminous efficiency is improved.

The invention relates to the technical field of plastic processing of metal materials, and discloses a method for improving spinning formability of a solid-solution-state barrel section with inner ribs through pretreatment, which comprises the following steps: annealing a barrel section blank made of an aluminum alloy material, firstly placing the barrel section blank in a heat treatment furnace for heat preservation at 400-450 DEG C, and then carrying out water quenching and cooling to room temperature; the annealed barrel section blank is installed on a cylindrical core mold, and then thinning spinning is carried out; carrying out solution treatment on the thinned barrel section blank, firstly putting the thinned barrel section blank in a heat treatment furnace for heat preservation at 500-540 DEG C, and then carrying out water quenching and cooling to room temperature; and the barrel section blank obtained after solution treatment is installed on a cylindrical core mold with rib grooves, spinning forming is carried out, and the aluminum alloy barrel section with the inner ribs is obtained. According to the method, annealing-thinning pretreatment is adopted, the cracking risk in the solid solution state barrel section spinning forming process is effectively reduced, the aluminum alloy strip inner rib barrel section obtained through the method has the higher rib height wall thickness ratio, and the method is suitable for various aluminum alloy strip inner rib barrel sections in aerospace.