37results about How to "Eliminate dislocations" patented technology

Implants are disclosed. Methods of making and using implants are also disclosed.

A Cu—Ni—Mo alloy thin film, including Ni as a solution element and Mo as a diffusion barrier element. Ni and Mo are co-doped with Cu. The enthalpy of mixing between Mo and Cu is +19 kJ / mol, and the enthalpy of mixing between Mo and Ni is −7 kJ / mol. The atomic fraction of Mo / Ni is within the range of 0.06-0.20 or the weight faction of Mo / Ni within the range of 0.10-0.33. The total amount of Ni and Mo additions is within the range of 0.14-1.02 at. % or wt. %. A method for manufacturing the alloy thin film is also provided.

The invention relates to a preparation method and product of a deformed magnesium-tin alloy with high thermal conductivity, belonging to the technical field of magnesium alloys. The method includes five processes of solid solution treatment, extrusion treatment, aging treatment, pre-deformation treatment and annealing treatment. The method mainly Through the combination of plastic deformation and heat treatment, through reasonable setting of process conditions in each process, the purpose of better controlling the grain orientation and precipitated phase orientation in the magnesium-tin alloy is achieved, so that the final prepared magnesium-tin alloy has high thermal conductivity. Rate. The method is simple and easy to operate, has low requirements on equipment and low cost, and is suitable for industrial production.

The invention discloses a double-layer crucible for growing silicon single crystals by a directional solidification method, which comprises an outer crucible and an inner crucible nested into the outer crucible, wherein the inner crucible comprises an inner crucible main body and an inner crucible bottom; the outer crucible comprises an outer crucible main body and an outer crucible bottom; the inner crucible bottom is provided with a seed crystal sleeve for placing seed crystals; the outer crucible bottom is provided with an anti-leakage cavity; an anti-leakage agent is placed in the anti-leakage cavity; and the internal cavity of the inner crucible main body is communicated with the anti-leakage cavity through the internal cavity of the seed crystal sleeve. The anti-leakage agent is notreacted with silicon and is immiscible with the silicon, the density of the anti-leakage agent is more than 2.4g / cm<3>, and the melting temperature of the anti-leakage agent is less than 1,410 DEG C.The double-layer crucible can effectively solve the seed crystal placing problem, realizes silicon single crystal growth by the directional solidification method, meanwhile can furthest prevent molten silicon from leaking from the seed crystal sleeve, has low cost and a simple structure, and is easy to process.

The invention provides a semiconductor structure comprising a first semiconductor material substrate, a first porous structure layer, a second porous structure layer and a second semiconductor material layer, wherein the first porous structure layer is formed on the first semiconductor material substrate; the second porous structure layer is formed on the first porous structure layer; the porosity and the aperture of the second porous structure layer are both less than the porosity and the aperture of the first porous structure layer; and the second semiconductor material layer is formed on the second porous structure layer. The invention can release the thermal mismatch stress of Si materials and epitaxial materials through the porous structure layers, prevent the problems of cracking and the like of an epitaxial film with larger thickness and enhance the quality of an epitaxial film crystal, thereby extending an epitaxial material layer (such as GaN and the like) which has large thickness and higher thermal mismatch stress with the Si materials on a Si substrate; and in addition, the porous Si materials can be removed in a subsequent process, therefore a subsequent device process can not be influenced.