Seeding mold for growing silicon crystals by using orientated solidification method and crystal growing method
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- GREENERGY CRYSTAL TECH
- Publication Date
- 2012-12-19
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention belongs to the field of solar-grade silicon manufacturing equipment and methods, and in particular relates to a seeding mold for growing silicon crystals by directional solidification, and a method for growing single crystal silicon / single crystal silicon using the seeding mold. Background technique
[0002] Silicon single crystal and silicon polycrystalline ingot are the most commonly used materials for crystalline silicon solar cells. Generally, solar cells manufactured using silicon single crystal materials have higher photoelectric conversion efficiency than solar cells manufactured using silicon polycrystalline materials. At present, the most commonly used manufacturing methods for silicon single crystal are pulling method (Czochralski method) and zone melting method (Floating Zone method); the manufacturing method for silicon polycrystal usually adopts directional solidification method (ie casting method). The directional solidific...