A seed crystal preparation method and laying method for ingot single crystal

A laying method and seed crystal technology, applied in the direction of single crystal growth, chemical instruments and methods, manufacturing tools, etc., can solve the problems of dislocation reduction, inability to meet, and inability to consider dislocation nucleation and generation, etc., to eliminate Possibility, effect of removing dislocations

Active Publication Date: 2022-06-21
史珺
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Problems solved by technology

The existence of polycrystalline will inevitably lead to the inability to improve the conversion efficiency of the crystal. At the same time, this method cannot reduce the original dislocation of the seed crystal, and because the temperature control is mainly used to ensure that the upper part of the seed crystal is melted and the bottom cannot be completely melted. Therefore, It is impossible to take into account the nucleation and generation of dislocations, and the formation of a large number of polycrystals will also generate stress, resulting in a large number of dislocations inside the single crystal (the dislocation density is as high as 10 5 / cm 2 Above), the quality of the "single crystal-like" single crystal part cannot meet the requirements of photovoltaic cells, so it cannot be mass-produced

Method used

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  • A seed crystal preparation method and laying method for ingot single crystal
  • A seed crystal preparation method and laying method for ingot single crystal
  • A seed crystal preparation method and laying method for ingot single crystal

Examples

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preparation example Construction

[0036] A method for preparing a seed crystal for ingot single crystal, according to the growth mode of single crystal silicon, growing according to a specific crystal orientation, cutting according to the specific crystal orientation, and then performing surface dislocation treatment, which specifically includes the following steps:

[0037] (1) In the seed crystal production stage, first determine the crystal orientation corresponding to the crystal growth direction (such as the crystal orientation), and perform vertical growth along the determined crystal growth direction, and use a dislocation-free single crystal (dislocation-free crystal). Density2 ), the seed crystal is grown into a bar; in the seed crystal production stage, the Czochralski single crystal method (CZ method) or the ingot single crystal method is used to produce the seed crystal. The diameter of the seed rod is as large as possible. Existing ingot diameters are mostly 6 inches or 8 inches, and there are al...

Embodiment example 1

[0057] 1) Using a single crystal furnace to draw a single crystal rod with a diameter of 252mm and a length of 2000 meters. After the dislocation test, the head and tail were cut off by 150mm to obtain a round rod with a length of 1700mm.

[0058] 2) Carry out the crystal orientation test on both ends and around the round bar to ensure: 1) The top is crystal orientation; 2) Measure {001}, {001 ̅}, {010}, {01 ̅0} around the bar The orientation of the four crystal planes, and draw the inscribed squares where these four crystal planes intersect with the end planes on the cross section (see image 3 ), the side length of the square is 180mm. Cut the round bar into square bars along the above four sections. The size of the square bar is 180x180x1700mm 3 .

[0059] 3) The silicon rod is cut into silicon blocks at intervals of 20mm along the direction of the crystal rod and perpendicular to the growth direction of the crystal rod, which is the blank of the seed crystal. The siz...

Embodiment example 2

[0062] 1) Using a single crystal furnace to draw a single crystal rod with a diameter of 300mm and a length of 1600 meters. After the dislocation test, the head and tail were cut by 150mm to obtain a round bar with a length of 1300mm.

[0063] 2) Carry out the crystal orientation test on both ends and around the round bar to ensure: 1) The top is crystal orientation; 2) Measure {001}, {001 ̅}, {010}, {01 ̅0} around the bar the directions of the four crystal planes, and draw the inscribed squares where these four crystal planes intersect with the end faces on the cross section (see image 3 ), the side length of the square is 214mm. Cut the round bar into square bars along the four sides of the inscribed square on the above-mentioned end face. The size of the square bar is: 214x214x1300mm 3 .

[0064] 3) The silicon rod is cut into silicon blocks at intervals of 26mm along the crystal rod direction and perpendicular to the growth direction of the crystal rod, which is the ...

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Abstract

The invention discloses a method for preparing a seed crystal for ingot single crystal and a laying method thereof. It specifically includes the following steps: in the seed crystal growth stage, firstly determine the crystal direction corresponding to the crystal growth direction, and perform vertical growth along the determined crystal growth direction, and adopt the preparation method of dislocation-free single crystal to carry out, the seed The crystal grows into a rod; in the seed crystal processing stage, the seed crystal rod must first be cut into a bar with a square cross-section along the growth direction of the seed crystal corresponding to the crystal direction; after the rod is cut, the seed crystal is cut into a seed crystal After the block is cut, the seed crystal block is ground, chamfered, and then washed with alkali to eliminate the damaged layer on the surface of the seed crystal during processing. The beneficial effects of the present invention are: polycrystalline nucleation will not occur, and the possibility of polycrystalline nucleation of cast single crystals is eliminated from the source; 50% of dislocations in seed crystals can be eliminated, and during the entire growth process of single crystals In this way, the probability of dislocation generation can be minimized.

Description

technical field [0001] The invention relates to the technical field of silicon crystal growth, in particular to a method for preparing a seed crystal for ingot single crystal and a method for laying the same. Background technique [0002] The existing single crystal silicon crystal growth mainly adopts the CZ method for Czochralski single crystal growth. The system adopts quartz glass crucible to carry polycrystalline silicon. After melting in the furnace, the seed crystal is slowly hoisted into the silicon liquid from above, and the equal diameter growth is carried out after the necking and shouldering processes. The seed crystal is usually a single crystal rod with a diameter of about 10 mm and a length of about 50 to 100 mm, which is pulled by a wire and placed into the silicon liquid from top to bottom. [0003] At present, the traditional ingot single crystal also lays multiple seed crystals on the bottom of the crucible. The size of the seed crystal is the same as the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B28D5/00B24B1/00C30B15/36
CPCB28D5/00B24B1/00C30B15/36
Inventor 史珺
Owner 史珺
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