Storage device and operating method thereof

A memory, operation storage technology, applied in static memory, read-only memory, digital memory information and other directions, can solve problems such as reducing memory operation margin

Inactive Publication Date: 2013-05-01
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, since the threshold voltage with respect to the second bit increases, the threshold voltage with respect to the first bit also increases, thereby reducing the memory operation margin.

Method used

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  • Storage device and operating method thereof
  • Storage device and operating method thereof
  • Storage device and operating method thereof

Examples

Experimental program
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Embodiment Construction

[0055] figure 1 It is a schematic cross-sectional view of a memory cell according to an embodiment of the present invention. Such as figure 1 As shown, memory cell 100 has substrate 102 . Two source / drain regions 104 are formed in the substrate 102 . The bottom insulating layer 108 of the memory cell 100 is formed on the channel between the source / drain regions 104 . Charge trapping layer 110 is located on top of insulating layer 108 , which is electrically isolated from substrate 102 by insulating layer 108 . When hot electrons are injected into the charge trapping layer 110, the hot electrons are trapped so that the threshold voltage of the memory cell 100 will be adjusted under control. The top insulating layer 112 is formed on the charge trapping layer 110 to electrically isolate the conductor gate 114 from the charge trapping layer 110 . The memory unit 100 has a first data storage region 110 a close to one of the source / drain regions 104 and a second data storage re...

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Abstract

The invention discloses a storage device and an operating method thereof. The operating method comprises the following steps of: exerting a first line voltage to a storage unit to detect a first current of the storage unit; when the first current is larger than a first reference current related to the first line voltage, judging that a first data storage area is in an unprogrammed state; otherwise, exerting a second line voltage to the storage unit to detect a second current of the storage unit; when the difference between the first current and the second current is larger than that between the first reference current and a second reference current, judging that the first data storage area is in the unprogrammed state; and otherwise, judging that the first data storage area is in a programming state.

Description

technical field [0001] The present invention relates to a method of operating a memory and a memory device, and more particularly to a method and a memory device for reducing second bit effects in a memory device. Background technique [0002] Memory is a semiconductor component used to store information or data. As computer microprocessors have become more powerful, the number of programs and operations performed by software has also increased. Therefore, the demand for memories with high storage capacity is gradually increasing. [0003] Among various memory products, non-volatile memory (non-volatile memory) allows multiple data programming (programming), reading (reading) and erasing (erasing) operations, and even after the power supply of the memory is interrupted Ability to save data stored in it. Due to these advantages, nonvolatile memory has become a widely used memory in personal computers and electronic equipment. [0004] Well-known electrically programmable ...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): G11C16/00G11C11/06
Inventor周聪乙蔡龙兴
OwnerMACRONIX INT CO LTD