Method for preparing vertical array of high-purity single-walled carbon nanotubes

A single-walled carbon nanotube and vertical arrangement technology is applied in the field of preparing high-purity single-walled carbon nanotube vertical arrays, which can solve the problems of difficult single-walled carbon nanotube arrays and low purity of carbon nanotubes, and achieves high purity, The effect of high growth efficiency

Inactive Publication Date: 2011-01-19
UNIV OF SHANGHAI FOR SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The purpose of the present invention is to overcome the drawbacks of the prior art preparation of single-walled carbon nanotubes, such as the difficulty of growing single-wall

Method used

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  • Method for preparing vertical array of high-purity single-walled carbon nanotubes
  • Method for preparing vertical array of high-purity single-walled carbon nanotubes
  • Method for preparing vertical array of high-purity single-walled carbon nanotubes

Examples

Experimental program
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Effect test

Embodiment 1

[0033] 1. Fabrication of vertical arrays of single-walled carbon nanotubes

[0034] (1) Cleaning of the substrate: select (100) monocrystalline silicon wafer as the growth substrate, cut it into small pieces with a size of 1×1cm, and ultrasonically clean them in acetone, alcohol, and ultrapure water for 5 minutes; Finally, the substrate was blown dry with high-purity nitrogen.

[0035] (2) Put the substrate into the vacuum chamber of the electron beam evaporation equipment and pump it to 1×10 -4 After Pa, first deposit 30nm of Al 2 o 3 thin film, and then deposit a 1.5nm Fe thin film under the condition of not breaking the vacuum; take out the sample after the coating is finished, and use it as a catalyst for the growth of carbon nanotubes.

[0036] (3) Put the substrate with the catalyst into the quartz tube of the chemical vapor deposition system, seal it and let 2000 sccm of helium and hydrogen (He / H 2 =4 / 1), and set the program to heat up to 850°C at a rate of 50°C / min...

Embodiment 2

[0050] 1. Fabrication of vertical arrays of single-walled carbon nanotubes

[0051] (1) Cleaning of the substrate: select (100) monocrystalline silicon wafer as the growth substrate, cut it into small pieces with a size of 1×1cm, and ultrasonically clean them in acetone, alcohol, and ultrapure water for 5 minutes; Finally, the substrate was blown dry with high-purity nitrogen.

[0052] (2) Put the substrate into the vacuum chamber of the magnetron sputtering equipment and pump it to 2×10 -4 After Pa, first deposit 30nm of Al 2 o 3 film, and then deposit a 1.2nm Fe film under the condition of not breaking the vacuum; take out the sample after the coating is finished, and use it as a catalyst for the growth of carbon nanotubes.

[0053] (3) Put the substrate with the catalyst into the quartz tube of the chemical vapor deposition system, seal it and let 2000 sccm of helium and hydrogen (He / H 2 =4 / 1), and set the program to heat up to 850°C at a rate of 50°C / min.

[0054] (4)...

Embodiment 3

[0059] Example 3 Preparation of vertical array of single-walled carbon nanotubes

[0060] (1) Cleaning of the substrate: select (100) monocrystalline silicon wafer as the growth substrate, cut it into small pieces of 1cm×1cm, and ultrasonically clean them in acetone, alcohol, and ultrapure water for 5 minutes; finally , and dry the substrate with high-purity nitrogen.

[0061] (2) Put the substrate into the vacuum chamber of the electron beam evaporation equipment and pump it to 1×10 -4 After Pa, first deposit 10nm of Al 2 o 3 thin film, and then deposit a 1.0nm Fe thin film under the condition of not breaking the vacuum; take out the sample after the coating is finished, and use it as a catalyst for the growth of carbon nanotubes.

[0062] (3) Put the substrate with the catalyst into the quartz tube of the chemical vapor deposition system, seal it and pass in 2000 sccm of argon and hydrogen (Ar / H 2 =6 / 4), and set the program to heat up to 850°C at a rate of 50°C / min.

[...

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Abstract

The invention discloses a method for preparing the vertical array of high-purity single-walled carbon nanotubes, and in particular relates to a moisture-assisted chemical vapor deposition method under normal pressure. In the method, aluminum oxide-supported transitional metal Fe is taken as a catalyst, inert gas and hydrogen are taken as carrier gas, 50 to 1000ppm moisture is added into chemical vapor deposition atmosphere to improve the efficiency and prolong the service life of the catalyst, and high-purity single-walled carbon nanotubes which are vertical to a substrate are prepared. By the method, the relatively high carbon nanotube array can be grown within ten minutes, and the carbon purity of the single-walled nanotubes can reach 99 weight percent.

Description

technical field [0001] The invention relates to a method for preparing vertical arrays of single-walled carbon nanotubes, in particular to a method for preparing vertical arrays of high-purity single-walled carbon nanotubes by moisture-assisted chemical vapor deposition under normal pressure, and belongs to the field of nanotechnology. Background technique [0002] Carbon nanotubes are one-dimensional hollow nanomaterials formed by curling graphite sheets formed by carbon atoms. The particularity of the structure determines that carbon nanotubes have a series of excellent properties, such as extremely high mechanical strength, unique electrical conductivity, good heat transfer capability, high specific surface area, chemical stability, and good field emission performance etc. Therefore, since the 1990s, the discovery of carbon nanotubes has attracted widespread attention from the international academic and industrial circles. [0003] Among the various macroscopic material...

Claims

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Application Information

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IPC IPC(8): C01B31/02
Inventor 赵斌杨俊和王现英杨光智何星唐志红张磊
Owner UNIV OF SHANGHAI FOR SCI & TECH
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