Method for preparing ultrathin strain material-on-insulator

Abstract

The invention relates to a method for preparing an ultrathin material-on-insulator. The method is characterized by comprising the following steps of: epitaxially growing a layer of semiconductor material on a selected semiconductor substrate material, wherein the thickness of the epitaxially grown semiconductor material is within the critical thickness, and crystals are in a full strain state; implanting oxygen ions to ensure that the oxygen ions are mainly distributed in the semiconductor substrate material; and performing high-temperature annealing at the temperature of between 800 and 1,200 DEG C to form an insulating buried layer and simultaneously relax the top of the epitaxially grown semiconductor material so as to transfer stress to the top of the substrate material and form a newstrain layer, wherein the thickness of the prepared ultrathin strain material layer is less than or equal to 50nm. By combining the oxygen ion implantation with the epitaxial process into one step, the processes of bonding and stripping are saved, and silicon-on-insulator is simply prepared.

Description

technical field [0001] The invention relates to a method for preparing an ultra-thin strain material on an insulator, and belongs to the field of silicon-on-insulator (SOI) materials and their preparation. Background technique [0002] The traditional methods of preparing strained materials on insulators generally use processes such as epitaxy, bonding, back grinding, or intelligent stripping. In actual operation, they are affected by a variety of different processes, and the preparation process is extremely complicated, resulting in the strain on the final prepared insulator Material crystal quality is limited. [0003] Manufacturing smaller-sized, higher-performance devices has always been the goal and direction of the development of the semiconductor industry. With the development of semiconductor technology, it is no longer possible to manufacture sufficiently high-speed, low-power transistors solely relying on silicon materials. Starting from the 90nm process, strained...

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Problems solved by technology

[0002] The traditional methods of preparing strained materials on insulators generally use processes such as epitaxy, bonding, back grinding, or intelligent stripping. In actual operation, they are affected by a variety of different processes, and the preparation process is extremely complicated, resulting in the strain on the final prepared insulator Material crystal quality is limited

[0003] Manufacturing smaller-sized, higher-performance devices has always been the goal and direction of the development of the semiconductor industry. With the development of semiconductor technology, it is no longer possible to manufacture sufficiently high-speed, low-power transistors solely relying on silicon materials.

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