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Method and memory device for averagely using plurality of blocks of flash memory, and controller

A controller and average ground technology, applied in the field of flash memory access, can solve problems such as instability, low erasure times, user data loss, etc., and achieve the effect of long service life

Active Publication Date: 2013-10-30
慧荣科技(深圳)有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, problems caused by the instability of multi-level cell flash memory have also emerged one by one
For example: According to related technologies, once the quality of the flash memory deteriorates due to long-term use, the user's data may be lost at any time
In particular, compared with single-level cell flash memory, the upper limit of erasing times of each block in multi-level cell flash memory is relatively low, which will make the above-mentioned instability problem more prominent.

Method used

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  • Method and memory device for averagely using plurality of blocks of flash memory, and controller
  • Method and memory device for averagely using plurality of blocks of flash memory, and controller
  • Method and memory device for averagely using plurality of blocks of flash memory, and controller

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Embodiment Construction

[0058] Please refer to figure 1 , is a schematic diagram of the first embodiment of the memory device 100 of the present invention. In this embodiment, the memory device 100 is preferably a portable memory device (for example, a memory card conforming to SD / MMC, CF, MS, XD standards). The memory device 100 includes: a flash memory (Flash Memory) 120 ; and a controller for accessing the flash memory 120 , wherein the controller is, for example, a memory controller 110 . According to the present embodiment, the memory controller 110 includes a microprocessor 112 , a read only memory (ROM) 112M, a control logic 114 , a buffer memory 116 , and an interface logic 118 . The ROM is used to store a program code 112C, and the microprocessor 112 is used to execute the program code 112C to control access to the flash memory 120 .

[0059] In a typical situation, the flash memory 120 includes a plurality of blocks (Block), and the controller (for example: the memory controller 110 that ...

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Abstract

The invention relates to a method for averagely using a plurality of blocks of a flash memory. The method comprises the following steps of: providing at least one threshold value for screening suitable blocks from the plurality of blocks according to erasing times of the plurality of blocks; comparing the erasing times of at least one part of the blocks with the at least one threshold value; and screening a special block from the blocks according to the purposes of the blocks for use. The invention further relates to a memory device for averagely using a plurality of blocks of a flash memory, and a controller. The memory device comprises a flash memory and a controller. The controller comprises a read-only memory and a microprocessor. Under the condition that the flash memory is low in quality caused by long-term use, the function of accessing data also can be maintained. In addition, a portable memory device realized by utilizing the invention has longer service life.

Description

technical field [0001] The present invention relates to the technical field of access to flash memory (Flash Memory), and more specifically, to a method for evenly using multiple blocks of a flash memory, a memory device and a controller. Background technique [0002] In recent years, due to the continuous development of related technologies of flash memory, various portable memory devices (eg memory cards conforming to SD / MMC, CF, MS, XD standards) have been widely implemented in many applications. Therefore, the access control of the flash memory in these portable memory devices has become a very hot issue. [0003] As far as the commonly used NAND flash memory is concerned, it can be mainly divided into two types of flash memory: single level cell (Single Level Cell, SLC) and multiple level cell (Multiple Level Cell, MLC). Each transistor in the single-level cell flash memory, which is regarded as a memory unit, has only two charge values, which are used to represent log...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/02G11C16/06
Inventor 沈扬智
Owner 慧荣科技(深圳)有限公司
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