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Method for accessing flash memory and relevant memory device

A memory device and memory technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of multi-level cell flash memory instability, user data loss, etc.

Inactive Publication Date: 2010-07-21
SILICON MOTION INC (CN) +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, problems caused by the instability of multi-level cell flash memory have also emerged one by one
For example: According to related technologies, once the quality of the flash memory deteriorates due to long-term use, the user's data may be lost at any time

Method used

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  • Method for accessing flash memory and relevant memory device
  • Method for accessing flash memory and relevant memory device
  • Method for accessing flash memory and relevant memory device

Examples

Experimental program
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Embodiment Construction

[0014] Please refer to figure 1 , figure 1 It is a schematic diagram of a memory device 100 according to a first embodiment of the present invention, wherein the memory device 100 of this embodiment is especially a portable memory device (for example: a memory device conforming to SD / MMC, CF, MS, XD standards Card). The memory device 100 includes: a flash memory (FlashMemory) 120 ; and a controller for accessing the flash memory 120 , wherein the controller is, for example, a memory controller 110 . According to the present embodiment, the memory controller 110 includes a microprocessor 112 , a read only memory (ROM) 112M, a control logic 114 , a buffer memory 116 , and an interface logic 118 . The ROM is used to store a program code 112C, and the microprocessor 112 is used to execute the program code 112C to control the access to the flash memory 120 (Access).

[0015] In a typical situation, the flash memory 120 includes a plurality of blocks (Block), and the controller (...

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PUM

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Abstract

The invention relates to a method for accessing a flash memory and a relevant memory device. The flash memory comprises a plurality of blocks. The method comprises that a page is selectively written into a fist block among the blocks; when the state of the flash memory is abnormal, whether the number of error bits is within a preset value is judged; and when the number of the error bits is not within the preset value, the first block is moved. The invention additionally provides the relevant memory device and a controller thereof. The controller comprises a read-only memory and a microprocessor, wherein the read-only memory is used to store a program code; and the microprocessor is used to execute the program code to control the access of the flash memory. Moreover, when the number of the error bits is not within the preset value, the microprocessor executes the program code to enable the controller to move the first block.

Description

technical field [0001] The present invention relates to the access (Access) of flash memory (Flash Memory), especially a method for accessing a flash memory and related memory devices. Background technique [0002] Due to the continuous development of flash memory technology in recent years, various portable memory devices (eg memory cards conforming to SD / MMC, CF, MS, XD standards) have been widely implemented in many applications. Therefore, the access control of the flash memory in these portable memory devices has become a very hot topic. [0003] As far as the commonly used NAND flash memory is concerned, it can be mainly divided into two types of flash memory: single-level cell (Single Level Cell, SLC) and multi-level cell (Multiple Level Cell, MLC). Each transistor in the single-level cell flash memory, which is used as a memory cell, has only two charge values, which are respectively used to represent a logic value of 0 and a logic value of 1. In addition, the stor...

Claims

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Application Information

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IPC IPC(8): G11C7/10G11C29/04
Inventor 林仁文
Owner SILICON MOTION INC (CN)
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