Growing III-V compound semiconductor from trench filled with intermediate layer

Abstract

A method for forming an integrated circuit structure includes forming an insulation layer over at least a portion of a substrate; and forming a plurality of semiconductor pillars over a top surface of the insulation layer. The plurality of semiconductor pillars are horizontally spaced apart by multiple portions of the insulation layer. The plurality of semiconductor pillars are allocated in a periodic pattern.The method further includes epitaxially growing a III-V compound semiconductor film from top surfaces and sidewalls of the semiconductor pillars. In addition, also disclosed is growing aIII-V compound semiconductor from a trench filled with an intermediate layer.

Description

[0001] Cross References to Related Applications [0002] This application is related to the following U.S. patent application: U.S. Provisional Patent Application Serial No. 61 / 262,042, filed November 17, 2009, and entitled "Growing III-V Compound Semiconductors from Trenches Filled with Intermediate Layers," which application is hereby incorporated Reference. technical field [0003] The present disclosure relates generally to integrated circuit fabrication processes, and more particularly, to forming III-Group V-group (III-V) compound semiconductor films. Background technique [0004] III-group V-compound semiconductors such as gallium nitride (GaN) (commonly referred to as III-V compound semiconductors) and their related alloys have been intensively studied in recent years due to their applications in electronic and optoelectronic devices. Application prospects. Specific examples of possible optoelectronic devices employing III-V compound semiconductors include blue lig...

AI Technical Summary

Problems solved by technology

[0006] In addition, the size of GaN films is limited due to the lack of suitable substrates for growing GaN films on

High stresses generated by growing GaN films on different substrates can lead to substrate bowing

This can lead to multiple adverse effects

First, a large number of defects (dislocations) are generated in the hypothetical crystalline GaN film

Second, the thickness of the resulting GaN film will be less uniform, causing a shift in the wavelength of light emitted by optical devices formed on the GaN film

Third, cracks are generated in the highly stressed GaN film

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