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Tetrabenzyl hafnium and synthetic method and application thereof

A technology of tetrabenzyl hafnium and benzyl magnesium chloride, applied in the field of metal-organic complexes, can solve the problems of reduced reaction efficiency, long reaction time, troublesome operation, etc., and achieve the effects of improving efficiency, simplifying operation, simplifying conditions and operation

Active Publication Date: 2012-12-12
NANJING UNIV
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Problems solved by technology

The reaction needs to be carried out at a very low temperature, which brings some troubles to the operation
And the reaction time is longer, reducing the efficiency of the reaction
The other is mainly to use mixed solvents for the reaction, and the post-reaction treatment needs to use hot n-heptane, which has brought some troubles to the reaction.

Method used

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  • Tetrabenzyl hafnium and synthetic method and application thereof

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Embodiment 1

[0023] Example 1 Tetrabenzyl hafnium (Hf(CH 2 Ph) 4 )Synthesis

[0024] First, prepare an ether solution of benzylmagnesium chloride from 1.2 g of magnesium and 5.9 g of benzyl chloride in 50 mL of ether. Then it was cooled to -40°C, under a nitrogen atmosphere, the HfCl 4 (4.2 g) solid was added to the above-mentioned Grignard reagent solution in batches within 5 minutes, and the resulting mixture was reacted in the dark, and the temperature was naturally raised to room temperature within 2 hours. Remove volatiles such as ether under vacuum, add 30mL of dichloromethane, stir, filter, remove insoluble matter, and concentrate the obtained filtrate to obtain tetrabenzyl hafnium product as a light yellow solid with a yield of 85-90%. 1 H NMR (CDCl 3 , 300 MHz): 7.25-7.35 (m, 8H), 7.12-7.17 (m, 4H), 6.55-6.63 (m, 8H), 1.41 (s, 8H).

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Abstract

The invention provides tetrabenzyl hafnium and a synthetic method and application thereof. The structural formula of tetrabenzyl hafnium is shown in the specification, wherein R in the formula is hydrogen, alkyl or halogen. The tetrabenzyl hafnium can be used as the precursor material of high k materials.

Description

1. Technical field [0001] The invention relates to a metal-organic complex in the field of chemistry, in particular to a tetrabenzyl hafnium and its synthesis method and application. 2. Background technology [0002] Intel's 45nm high-K semiconductor process technology is called Intel's 45nm high-K metal gate silicon process technology. This technology breakthrough uses metal hafnium to make a gate insulating layer with high K characteristics, which is an important innovation in the semiconductor industry in the past 40 years. [0003] Through the use of new material combinations including high-K gate dielectrics and metal gates, Intel's 45nm technology has become an industry-wide effort to reduce transistor current leakage (a problem for chipmakers that will become increasingly smaller as transistors get smaller). increasingly prominent) an important milestone in the journey. [0004] This new breakthrough in transistor technology will propel Intel to new heights in proce...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C07F7/00H01L29/51
Inventor 潘毅曹季梅海波
Owner NANJING UNIV