Solar cell and preparation method thereof

Abstract

The invention relates to a solar cell, which comprises a back electrode, a silicon chip substrate, a silicon doped layer and an upper electrode. The silicon chip substrate comprises a first surface and a second surface arranged opposite to the first surface, and the second surface of the silicon chip substrate is provided with a plurality of step-shaped three-dimensional nano structures; the backelectrode is arranged on the first surface of the silicon chip substrate and is in ohmic contact with the first surface; the silicon doped layer is formed on the surface of the three-dimensional nanostructures and the second surface of the silicon chip substrate between the adjacent three-dimensional nano structures; and the upper electrode is arranged on at least partial surface of the silicon doped layer. The invention also relates to a preparation method for the solar cell.

Description

technical field [0001] The invention relates to a solar cell and a preparation method thereof. Background technique [0002] Solar energy is one of the cleanest energy sources today, inexhaustible and inexhaustible. The utilization of solar energy includes light energy-thermal energy conversion, light energy-electric energy conversion and light energy-chemical energy conversion. A solar cell is a typical example of light-to-electricity conversion, which is made using the photovoltaic principle of semiconductor materials. According to the different types of semiconductor photoelectric conversion materials, solar cells can be divided into silicon-based solar cells (please refer to the production of solar cells and polysilicon, Journal of Materials and Metallurgy, Zhang Mingjie et al., vol6, p33-38 (2007)), gallium arsenide solar cells , organic thin film solar cells, etc. [0003] At present, solar cells are dominated by silicon-based solar cells. see figure 1 , figure 1...

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Problems solved by technology

[0004] However, in the prior art, since the surface of the doped silicon layer 44 formed on the second surface 43 of the silicon wafer substrate 42 is a flat planar structure, its surface area is small, so the solar cell 400 Light-taking area is small

In addition, when sunlight is incident on the surface of the doped silicon layer 44 from the outside, since the surface of the doped silicon layer 44 is a planar structure, part of the light irradiated on the doped silicon layer 44 is absorbed and partly reflected. , and the reflected light cannot be reused, so the solar cell 400 has a low utilization rate of light

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