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Solar cell manufacture method

A solar cell and back electrode technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of small surface area, small light-taking area of ​​solar cells, and low light utilization rate of solar cells, so as to increase yield and increase The light-taking area and the effect of improving the utilization rate

Active Publication Date: 2013-10-23
TSINGHUA UNIV +1
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Problems solved by technology

[0004] However, the surface of the doped silicon layer prepared by the method for preparing solar cells in the prior art is a flat planar structure, and its surface area is relatively small. Therefore, the light-taking area of ​​the solar cell is relatively small.
In addition, when sunlight is incident on the surface of the doped silicon layer from the outside, a part of the light irradiated on the doped silicon layer is absorbed, a part is reflected, and the reflected light cannot be reused, so the solar cell is sensitive to light. low utilization

Method used

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Embodiment Construction

[0018] see figure 1 , The first embodiment of the present invention provides a solar cell 10 , comprising: a back electrode 100 , a silicon wafer substrate 110 , a doped silicon layer 120 and an upper electrode 130 from bottom to top. Sunlight is incident from one side of the upper electrode 130 . The silicon substrate 110 has a first surface 111 and a second surface 113 opposite to the first surface 111, and the second surface 113 is the part of the silicon substrate 110 close to the upper electrode 130. Surface, that is, the surface on the side close to the incident direction of sunlight. The second surface 113 of the silicon wafer substrate has a plurality of three-dimensional nanostructures 114; the back electrode 100 is arranged on the first surface 111 of the silicon wafer substrate 110, and is in ohmic contact with the first surface 111; The doped silicon layer 120 is formed on the second surface 113 of the silicon wafer substrate, that is, the doped silicon layer 120...

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Abstract

A solar cell manufacture method is disclosed, comprising the steps of providing a silicon base plate which is provided with a first surface and a second surface which is arranged opposite to the first surface; arranging a patterned mask layer on the second surface of the silicon base plate; etching the silicon base plate and forming a plurality of three dimensional nanostructures which are bar-shaped protruding structures, wherein the cross section of each bar-shaped protruding structure is shaped like a bow; removing the patterned mask layer; forming a doped silicon layer on the surfaces of the three dimensional nanostructures and the surface of the silicon base plate among neighboring three dimensional nanostructures; providing an upper electrode and arranging the upper electrode on at least part of the surface of the doped silicon layer; providing a back electrode and arranging the back electrode on the first surface of the silicon base plate.

Description

technical field [0001] The invention relates to a preparation method of a solar cell. Background technique [0002] Solar energy is one of the cleanest energy sources today, inexhaustible and inexhaustible. The utilization of solar energy includes light energy-thermal energy conversion, light energy-electric energy conversion and light energy-chemical energy conversion. A solar cell is a typical example of light-to-electricity conversion, which is made using the photovoltaic principle of semiconductor materials. According to different types of semiconductor photoelectric conversion materials, solar cells can be divided into silicon-based solar cells, gallium arsenide solar cells, organic thin-film solar cells, and the like. [0003] At present, solar cells are dominated by silicon-based solar cells. A solar cell in the prior art includes: a back electrode, a silicon wafer substrate, a doped silicon layer and an upper electrode. In the solar cell, the silicon wafer substr...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/1804H01L33/20H01L31/068H01L31/02363Y02E10/50H01L31/00Y02E10/547Y02P70/50
Inventor 金元浩李群庆范守善
Owner TSINGHUA UNIV