Method of forming vertical structure light emitting diode with heat exhaustion structure

一种发光二极管、垂直结构的技术，应用在电气元件、电路、半导体器件等方向，能够解决增加制作成本、2英寸晶圆产量低等问题

Inactive Publication Date: 2013-05-29
WALSIN LIHWA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to improve the yield rate of LLO, the width of the main isolation path between two adjacent epitaxial components must be widened, which results in a low yield of 2-inch wafers and indirectly increases the production cost

Method used

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  • Method of forming vertical structure light emitting diode with heat exhaustion structure
  • Method of forming vertical structure light emitting diode with heat exhaustion structure
  • Method of forming vertical structure light emitting diode with heat exhaustion structure

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Experimental program
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Embodiment Construction

[0025] In order to solve the heat dissipation problem caused by the current pushing effect, there is an urgent need for a vertical light-emitting diode with a heat dissipation structure. As described below, embodiments of the present invention disclose a method for forming a vertical light emitting diode with a heat dissipation structure.

[0026] Figure 1 to Figure 9 The first embodiment of this case is shown. In this embodiment, firstly, a sapphire substrate 100 is provided. Thereafter, a plurality of recesses 101 are formed on the sapphire substrate 100 by a photoetching process, a wet etching process, or a dry etching process. The depth of the recess 101 is p, and the width of the recess is m. The buffer layer 102 formed on the sapphire substrate 100 has a plurality of protrusions 103 with a height q and a width n of the protrusions.

[0027] The convex portion 103 of the buffer layer 102 is housed in the concave portion 101 of the sapphire substrate 100 . Since the h...

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PUM

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Abstract

A method of forming a vertical structure light emitting diode with a heat exhaustion structure, comprising the steps of: providing a sapphire substrate; producing a number of recesses on the sapphire substrate, each of which has a depth of p; forming a buffer layer having a number of protrusions, each of which has a height of q smaller than p so that when the protrusions of the buffer layer are accommodated within the recesses of the sapphire substrate, a number of gaps are formed therebetween for heat exhaustion; growing a number of luminescent layers on the buffer layer, having a medium layer formed between the luminescent layers and the buffer layer; etching through the luminescent layers and the buffer layer to form a duct for heat exhaustion; removing the sapphire substrate by excimer laser lift-off (LLO); roughening the medium layer; and depositing electrodes on the roughened medium layer.

Description

technical field [0001] The present invention relates to a method for forming a vertical structure light-emitting diode (LED), especially a vertical structure light-emitting diode with a channel and a plurality of gaps, so as to facilitate heat dissipation and improve the laser lift-off (LLO) process at the same time The yield rate and increase LED production capacity. Background technique [0002] In recent years, thermal management is still the main issue in the development of packaged high-power LEDs driven by high currents. Due to the lateral current conduction structure epitaxially on the sapphire substrate, there are disadvantages of current crowding effect, high series resistance and poor heat dissipation. [0003] In addition, the heat dissipation substrate of the laser lift-off (LLO) process using a short-wavelength excimer source can solve the disadvantage of poor heat dissipation of sapphire. For example, US Patent No. 7,384,807 discloses a method of fabricating ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/64
CPCH01L33/0079H01L33/12H01L33/007H01L33/0093
Inventor 陈学龙枫政国张简庆华陈彰和
Owner WALSIN LIHWA
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