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NMOS (n-channel metal oxide semiconductor) control circuit for PMOS (p-channel metal oxide semiconductor) control end

A control circuit and control terminal technology, applied in circuits, transistors, semiconductor devices, etc., can solve problems such as increasing circuit current power consumption, speeding up QN turn-off speed, etc., to achieve the effects of low current consumption, easy circuit implementation, and high reliability.

Inactive Publication Date: 2012-12-19
天津南大强芯半导体芯片设计有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to speed up the turn-off speed of QN, the only way to reduce the resistance of resistors R1 and R2 is to increase the current consumption of the circuit

Method used

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  • NMOS (n-channel metal oxide semiconductor) control circuit for PMOS (p-channel metal oxide semiconductor) control end
  • NMOS (n-channel metal oxide semiconductor) control circuit for PMOS (p-channel metal oxide semiconductor) control end
  • NMOS (n-channel metal oxide semiconductor) control circuit for PMOS (p-channel metal oxide semiconductor) control end

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0018] Embodiment: a kind of NMOS control circuit of PMOS control terminal (see figure 2 ), including power and ground, is characterized in that it includes a PMOS control terminal, a PMOS-to-NMOS control module, an NMOS closing acceleration module, an NMOS control terminal and a high-power NMOS switch; wherein, the input terminal of said NMOS closing acceleration module is connected A PMOS control terminal and a power supply terminal, the output terminal of which is connected to the input terminal of the PMOS-to-NMOS control module; the input terminal of the said PMOS-to-NMOS control module is connected to the power supply, and its output terminal is connected to the NMOS control terminal and a high-power NMOS switch; and One end of the PMOS-to-NMOS-to-NMOS control module, the NMOS shutdown acceleration module, and the high-power NMOS switch is grounded respectively.

[0019] The above-mentioned PMOS to NMOS control module (see image 3 ) is composed of a PMOS transistor Q1...

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PUM

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Abstract

The invention relates to an NMOS (n-channel metal oxide semiconductor) control circuit for a PMOS (p-channel metal oxide semiconductor) control end, which is characterized by comprising a PMOS control end, a control module for switching PMOS to NMOS, an NMOS close quickening module, an NMOS control end and a high-power NMOS switch. The NMOS control circuit for a PMOS control end has the followingadvantages: (1) the speed for closing a high power NMOS tube is increased by using the quickening module and the NMOS tube is prevented from being burnt down by the long-term large current, and (2) the structure is simple, the current consumption is small, the circuit is easily realized and the reliability is high.

Description

(1) Technical field: [0001] The invention relates to a power electronic switch control circuit, in particular to an NMOS control circuit of a PMOS control terminal. (two) background technology: [0002] In the NMOS control circuit of the current PMOS control terminal, for example, in the application of lithium power battery protection circuit, the control terminal of the original control PMOS power tube is used to control the NMOS power tube, and the PMOS control signal needs to be passed through a PMOS tube to control the resistance branch. The current switch generates the control signal of the NMOS power transistor. Due to the larger size of the NMOS power transistor and the larger equivalent capacitance, there is a contradiction between current consumption and turn-off speed in the prior art. If you want to increase the turn-off speed of the NMOS power transistor, you have to reduce the resistance value of the resistance branch and increase the current of the resistance ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/60
Inventor 黄维海戴宇杰张小兴吕英杰
Owner 天津南大强芯半导体芯片设计有限公司