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Semiconductor structure with passive component structure and manufacturing method thereof

A technology of passive components and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., and can solve problems such as circuit layer usage limitations

Active Publication Date: 2013-03-27
ADVANCED SEMICON ENG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the circuit layer of the traditional interposer is only used as an electrical connection via hole, and has no other purpose, which limits the use of the circuit layer.

Method used

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  • Semiconductor structure with passive component structure and manufacturing method thereof
  • Semiconductor structure with passive component structure and manufacturing method thereof
  • Semiconductor structure with passive component structure and manufacturing method thereof

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Experimental program
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Embodiment Construction

[0058] Please refer to figure 1 , which shows a cross-sectional view of a semiconductor structure according to an embodiment of the present invention. The semiconductor structure 100 includes an interposer substrate 102 , a first dielectric layer 104 , a passive device layer 106 , a second dielectric layer 108 and a re-distribution layer (RDL) 110 .

[0059] The semiconductor structure 100 can be said to have an interposer of the passive device structure, thus increasing the use of the semiconductor structure 100 and expanding its application field, and the passive device layer 106 is formed during the fabrication process of the interposer.

[0060] The interposer substrate 102 has at least one conductive via 112 and opposite first and second surfaces 102 a and 102 b.

[0061] The via hole of the interposer substrate extends between the first surface and the second surface of the interposer substrate. For example, the via hole 112 extends from the first surface 102 a to the ...

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PUM

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Abstract

Provided is a semiconductor structure with a passive component structure and a manufacturing method thereof. The semiconductor structure comprises an interposer substrate, a first dielectric layer, a passive component layer, a second dielectric layer and a re-distribution layer. The first dielectric layer is arranged on the interposer substrate which is provided with a via. The first dielectric layer is provided with a first aperture and the conductive via is exposed from the first aperture. The passive component layer is arranged on the first dielectric layer and is provided with a second aperture. The first aperture is exposed from the second aperture. The second dielectric layer is disposed at the passive component layer. The re-distribution layer is disposed at the passive component layer and is electrically connected with the conductive via through a second aperture of the second dielectric layer, the second aperture of the passive component layer and the first aperture of the first dielectric layer.

Description

technical field [0001] The present invention relates to a semiconductor structure and its manufacturing method, and in particular to a semiconductor structure with a passive component structure and its manufacturing method. Background technique [0002] A traditional interposer includes a silicon substrate, a first insulating layer, a second insulating layer and a wiring layer. The first insulating layer and the second insulating layer are respectively formed on two opposite surfaces of the silicon substrate. The silicon substrate has at least one via hole, and the wiring layer is formed on one of the first insulating layer and the second insulating layer, and is electrically connected to the via hole. [0003] However, the circuit layer of the traditional interposer is only used for electrically connecting via holes, and has no other purpose, so the application of the circuit layer is limited. Contents of the invention [0004] The invention relates to a semiconductor s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/48H01L23/485H01L21/48
Inventor 陈建桦李德章张勇舜张添贵吴怡婷
Owner ADVANCED SEMICON ENG INC