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Broadband rail-to-rail amplifier with low power consumption, realized by MOS (Metal Oxide Semiconductor) components

A MOS device and amplifier technology, which is applied in the field of broadband low-power rail-to-rail amplifiers, can solve the problems of unused transmission of small signal current, difficulty in achieving high bandwidth performance, high static power consumption, etc., to increase small signal settling time, The effect of increasing bandwidth and increasing amplitude

Active Publication Date: 2013-05-22
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] 1. Compared with other types of amplifiers, its static power consumption is high
[0007] 2. The current sources P3, P6, N3, and N6 are only used as current sources and are not used to transmit small signal currents, which is a kind of "waste".
[0008] 3. In the case of strict power consumption requirements, it is difficult to achieve high bandwidth performance

Method used

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  • Broadband rail-to-rail amplifier with low power consumption, realized by MOS (Metal Oxide Semiconductor) components
  • Broadband rail-to-rail amplifier with low power consumption, realized by MOS (Metal Oxide Semiconductor) components
  • Broadband rail-to-rail amplifier with low power consumption, realized by MOS (Metal Oxide Semiconductor) components

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Embodiment Construction

[0018] The broadband low power consumption rail-to-rail amplifier proposed by the present invention is realized by using MOS devices, and a specific implementation mode thereof is realized by CMOS technology. The broadband low-power rail-to-rail amplifier includes three parts: a rail-to-rail input stage, an intermediate stage that amplifies the regenerative current, and a rail-to-rail output stage;

[0019] Such as figure 2 As shown, the rail-to-rail input stage is composed of PMOS transistors P1a, P1b, P2a, P2b and NMOS transistors N1a, N1b, N2a, N2b;

[0020] The intermediate stage for amplifying and recovering current includes four current mirrors: the first current mirror is composed of NMOS transistors N7, N4, and N3, the second current mirror is composed of NMOS transistors N8, N5, and N6, and the second current mirror is composed of PMOS transistors P7, P4, The third current mirror of P3 and the fourth current mirror composed of P8, P5, and P6; the rail-to-rail output...

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Abstract

The invention discloses a broadband rail-to-rail amplifier with low power consumption, realized by MOS (Metal Oxide Semiconductor) components, belonging to the field of design of analogue integrated circuits. The broadband rail-to-rail amplifier with low power consumption comprises a rail-to-rail input stage composed of four NMOS (N-channel Metal Oxide Semiconductor) transistors and four PMOS (P-channel Metal Oxide Semiconductor) transistors; the circuit transforms an input voltage signal into a current signal to form a reversed recovery current; a middle stage of an amplified recovery current, composed of four low-voltage current mirrors, can realize the amplification function on the recovery current; and a rail-to-rail output stage composed of two PMOS transistors and two NMOS transistors realizes the rail-to-rail output of the signal. In the invention, the broadband rail-to-rail amplifier has the advantages of increasing the capability of the broadband by more than two times under the condition of not increasing power consumption, increasing low-frequency gain and large signal slew rate, increasing the amplitude of an input / output signal when the amplifier works in a low-voltage environment, and the like. Each MOS transistor can be selected from conventional MOS transistors and also can be selected from strained silicon MOS tubes with high mobility so as to further improve the performance of the circuit.

Description

Technical field: [0001] The invention belongs to the field of analog integrated circuit design, in particular to a wide-band low-power rail-to-rail amplifier using a CMOS tube. Background technique: [0002] Since the 20th century, with the development of submicron and ultra-deep submicron technology and the increasing maturity of system chip technology, portable electronic products powered by batteries have achieved rapid development and rapid popularization. Since the development of battery technology is far behind the development of electronic systems, products ranging from heart pacemakers to hearing aids, mobile phones and various products have imposed strict restrictions on the supply voltage of electronic products. On the other hand, as the size of the device continues to shrink, the breakdown voltage of the process is also reduced, which also imposes strict restrictions on the power supply voltage. The performance requirements of electronic devices are getting highe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F3/45
Inventor 方华军赵晓王敬梁仁荣许军
Owner TSINGHUA UNIV
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