Broadband rail-to-rail amplifier with low power consumption, realized by MOS (Metal Oxide Semiconductor) components
A MOS device and amplifier technology, which is applied in the field of broadband low-power rail-to-rail amplifiers, can solve the problems of unused transmission of small signal current, difficulty in achieving high bandwidth performance, high static power consumption, etc., to increase small signal settling time, The effect of increasing bandwidth and increasing amplitude
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[0018] The broadband low power consumption rail-to-rail amplifier proposed by the present invention is realized by using MOS devices, and a specific implementation mode thereof is realized by CMOS technology. The broadband low-power rail-to-rail amplifier includes three parts: a rail-to-rail input stage, an intermediate stage that amplifies the regenerative current, and a rail-to-rail output stage;
[0019] Such as figure 2 As shown, the rail-to-rail input stage is composed of PMOS transistors P1a, P1b, P2a, P2b and NMOS transistors N1a, N1b, N2a, N2b;
[0020] The intermediate stage for amplifying and recovering current includes four current mirrors: the first current mirror is composed of NMOS transistors N7, N4, and N3, the second current mirror is composed of NMOS transistors N8, N5, and N6, and the second current mirror is composed of PMOS transistors P7, P4, The third current mirror of P3 and the fourth current mirror composed of P8, P5, and P6; the rail-to-rail output...
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