Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Low-power consumption bandwidth-multiplying operational amplifier realized by metal oxide semiconductor (MOS) devices

An operational amplifier and MOS device technology, applied in the direction of DC-coupled DC amplifiers, differential amplifiers, etc., can solve the problems of small-signal current waste, high static power consumption, and difficulty in achieving high-bandwidth performance, and achieve the effect of increasing low-frequency gain.

Active Publication Date: 2013-02-27
TSINGHUA UNIV
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] 1. Compared with other types of amplifiers, its static power consumption is high
[0007] 2. The current sources N1 and N2 are only used as current sources, and it is a "waste" that they are not used to transmit small signal currents
[0008] 3. In the case of strict power consumption requirements, it is difficult to achieve high bandwidth performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low-power consumption bandwidth-multiplying operational amplifier realized by metal oxide semiconductor (MOS) devices
  • Low-power consumption bandwidth-multiplying operational amplifier realized by metal oxide semiconductor (MOS) devices
  • Low-power consumption bandwidth-multiplying operational amplifier realized by metal oxide semiconductor (MOS) devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The present invention proposes a low-power consumption bandwidth multiplication operational amplifier realized by MOS devices, such as figure 2 As shown, it includes a shunt input stage, an intermediate stage for amplifying and recovering current, and a rail-to-rail output stage; the shunt input stage is mainly composed of PMOS transistors P1a, P2a and NMOS transistors N1b, N2b; the shunt input stage is composed of PMOS transistor P1a , P2a and NMOS transistors N1b, N2b; the intermediate stage of the amplification and recovery current is composed of four current mirrors, wherein NMOS transistors N4, N6, N7 form the first current mirror, and NMOS transistors N8, N10, N11 form the second current mirror Mirror, PMOS transistors P4, P6, P7 form the third current mirror, PMOS transistors P8, P10, P11 form the fourth current mirror; the rail-to-rail output stage is composed of NMOS transistors N5, N9 and PMOS transistors P5, P9.

[0021] exist figure 2 Among them, the posi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a low-power consumption bandwidth-multiplying operational amplifier realized by metal oxide semiconductor (MOS) devices, which belong to the field of analogue integrated circuit design. The amplifier comprises a shunting input stage, an intermediate stage and a rail-to-rail output stage, wherein the shunting input stage consists of two N-channel metal oxide semiconductor (NMOS) transistors and two P-channel metal oxide semiconductor (PMOS) transistors, converts an input voltage signal into a current signal, and forms low forward-backward signal current; the intermediate stage consists of four low voltage current mirrors, and amplifies recovery current to realize a recovery current amplification function; and the rail-to-rail output stage consists of four PMOS transistors and four NMOS transistors to realize the rail-to-rail output of signals. The low-power consumption bandwidth-multiplying operational amplifier has a plurality of advantages of capability of increasing a bandwidth by more than triple under the condition of not remarkably increasing power consumption, increasing of low frequency gain and signal swing rate, capability of working in a low voltage environment to increase input / output signal amplitude, and the like; each MOS device can adopt the conventional MOS transistors, and also can adopt strained silicon MOS devices with high mobility to further improve the performance of the circuit.

Description

technical field [0001] The invention belongs to the field of analog integrated circuit design. In particular, it relates to a novel low power bandwidth doubler operational amplifier. Background technique [0002] Since the 20th century, with the development of submicron and ultra-deep submicron technology and the increasing maturity of system chip technology, portable electronic products powered by batteries have achieved rapid development and rapid popularization. Since the development of battery technology is far behind the development of electronic systems, products ranging from heart pacemakers to hearing aids, mobile phones and various products have imposed strict restrictions on the supply voltage of electronic products. On the other hand, as the size of the device continues to shrink, the breakdown voltage of the process is also reduced, which also imposes strict restrictions on the power supply voltage. The performance requirements of electronic devices are getting...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H03F3/45
Inventor 方华军赵晓梁仁荣王敬许军
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com