Backward diode-triggered thyristor for electrostatic protection

A reverse diode, electrostatic protection technology, applied in the direction of diodes, circuits, electrical components, etc., can solve the problems of circuit device damage, short time, large energy, etc., and achieve the effects of uniform current, rapid response, and simple structure
CN102263102BInactive Publication Date: 2012-12-19ZHEJIANG UNIV
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
ZHEJIANG UNIV
Publication Date
2012-12-19
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention discloses a backward diode-triggered thyristor for electrostatic protection. The backward diode-triggered thyristor consists of an N well resistor, a P well, a P substrate resistor, a backward diode, a first bipolar transistor PNP and a second bipolar transistor NPN, wherein the N well resistor, the P well and the P substrate resistor are arranged on a P substrate; the backward diode consists of an N+ active injection region and the P well; the first bipolar transistor PNP consists of a P+ active injection region, an N well and the P substrate; the second bipolar transistor NPN consists of a second N well, the P substrate and a first N well; the first N well is embedded into the P well; and a first N+ active injection region is arranged in the P well. The backward diode-triggered thyristor for electrostatic protection forms a voltage clamp by utilizing the backward diode, the parasitic well resistor and the parasitic substrate resistor, realizes quick response to electrostatic discharge (ESD) pulses and the pre-enabling of a protective structure, and realizes low voltage triggering and adjustable maintaining voltage to further realize the electrostatic protective structure.
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Description

technical field

[0001] The invention belongs to the technical field of integrated circuits, in particular to a reverse diode-triggered thyristor for improving the reliability and static power consumption of thyristor-based integrated circuit ESD protection devices. Background technique

[0002] The phenomenon of electrostatic discharge (ESD) in nature poses a serious threat to the reliability of integrated circuits. In the industrial world, 30% of the failures of integrated circuit products are caused by the phenomenon of electrostatic discharge, and the smaller and smaller process size and the thinner gate oxide thickness greatly increase the probability of the integrated circuit being damaged by electrostatic discharge. Therefore, improving the reliability of ESD protection of integrated circuits has a non-negligible effect on improving the yield of products.

[0003] The modes of electrostatic discharge phenomenon are usually divided into four types: HBM (Human Body Disc...

Claims

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