Manufacturing method of chuck plate for electrostatic chuck
A technology of electrostatic chuck and manufacturing method, which is applied in the direction of manufacturing tools, holding devices using electrostatic attraction, semiconductor/solid-state device manufacturing, etc., which can solve the problems that the wafer cannot be separated, increase the manufacturing process, and trouble, and reduce the contact area. , Improve production efficiency, simple operation
Active Publication Date: 2014-10-15
ULVAC INC
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0006] However, as mentioned above, when using a chuck made by flat grinding or buffing the surface of the sintered body, at the beginning of use, even if the application of voltage to the electrodes is stopped, the wafer may not be released due to the influence of residual charges.
Although such a problem can be solved by using a dummy substrate to repeatedly absorb and detach from the clamp for hundreds of times (that is, the detachment of the wafer can be well implemented without being affected by residual charges), this method is It is troublesome to make the electrostatic chuck work, and there is a problem of increasing the production process
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0023] The following describes an electrostatic chuck EC having a chuck manufactured by a manufacturing method according to an embodiment of the present invention with reference to the accompanying drawings. In a vacuum processing apparatus for implantation processing, etching processing, or film formation processing by PVD method or CVD method, the wafer W is kept in the vacuum processing apparatus from the beginning of its use, and the wafer W can be reliably processed after processing. Detached cardboard.
[0024] Such as figure 1 As shown, the electrostatic chuck EC is composed of a chuck main body 1 installed at the bottom of a processing chamber (not shown) and a chuck plate 2 provided on the upper surface of the chuck main body 1, and the chuck plate 2 is a dielectric body. Chuck main body 1, for example is made of aluminum nitride material, and on the upper part of chuck main body 1, passes through the insulating layer not shown, is packed with positive and negative e...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
Provided is a method of manufacturing a chuck for an electrostatic chuck, which has a high production efficiency in which a wafer W, which is a substrate to be processed, is less prone to detachment failure from the beginning of use. is a method of manufacturing a chuck plate (2) made of a dielectric body used on an electrostatic chuck (ES) covering the surface of a chuck body (1) with electrodes (3a, 3b), comprising: powdering raw materials After being compressed into a specified shape, the process of sintering to obtain a sintered body; through grinding, the process of processing the surface of the sintered body that is in contact with the substrate to be adsorbed to the specified surface roughness and flatness; selectively removing only the process that occurs with the grinding process The process of blasting the particles that are prepared to come out.
Description
technical field [0001] The invention relates to a manufacturing method of a chuck plate used as a dielectric body on an electrostatic chuck for absorbing and fixing a silicon wafer waiting for a substrate to be processed. Background technique [0002] In order to obtain the desired equipment structure in the semiconductor manufacturing process, ion implantation treatment, etching treatment, film formation treatment using PVD method, CVD method, etc. are performed. An electrostatic chuck to fix a silicon wafer (hereinafter referred to as "wafer") in a processing chamber in a vacuum atmosphere. Conventional electrostatic chucks, for example, are known from Patent Document 1, which are so-called bipolar electrostatic chucks in which a chuck plate as a dielectric body is mounted on the upper surface of a chuck body in which positive and negative electrodes are embedded. [0003] Furthermore, it is well known that depending on the processing carried out in the vacuum processing ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/683H02N13/00
CPCH01L21/68757H01L21/6833B23Q3/15H01L21/683H01L21/687H02N13/00
Inventor 难波隆宏森本直树曾我部浩二石田正彦
Owner ULVAC INC