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Compound semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, which are applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, and semiconductor/solid-state device components, etc., can solve the problems such as the reduction and limitation of the size of the compound semiconductor device 150

Active Publication Date: 2013-05-08
RICHWAVE TECH CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] However, the pitch P1 between the elements A and B may limit the number of elements that can be disposed in a unit area on the GaAs substrate 100, which is not conducive to reducing the size of the compound semiconductor device 150.

Method used

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  • Compound semiconductor device and manufacturing method thereof
  • Compound semiconductor device and manufacturing method thereof
  • Compound semiconductor device and manufacturing method thereof

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Embodiment Construction

[0044] The following will be coordinated with the following and Figure 6-8 , Figures 9a-9e and Figure 10 Several embodiments of the present invention are illustrated in the accompanying drawings. In these drawings, the same reference numerals represent the same elements.

[0045] Please refer to Image 6 , shows a compound semiconductor device 250 according to an embodiment of the present invention. For illustration purposes, only a part of the compound semiconductor device 250 is partially shown here.

[0046] Such as Image 6 As shown, the compound semiconductor device 250 mainly includes a GaAs substrate 200 in which at least one trench 246 is formed, thus defining a separated protrusion 200 a and a protrusion 200 b on the GaAs substrate 200 . The component C can be disposed on the protruding portion 200a, and the component D can be disposed on the protruding portion 200b. A passivation layer 240 is conformally formed on the GaAs substrate 200 , devices C and D, a...

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PUM

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Abstract

The invention provides a compound semiconductor device and a manufacturing method thereof. The method for manufacturing the compound semiconductor device comprises: providing a gallium arsenide substrate; forming a first element and a second element respectively arranged on a first part and a second part of the gallium arsenide substrate; forming a first protection layer on the first element and the second element of the gallium arsenide substrate; partially removing the first protection layer on the first element and the second element and on the gallium arsenide substrate between the first element and the second element; applying an etching program, using the first protection layer as an etching mask, forming a groove in one part of the gallium arsenide substrate between the first element and the second element; forming an electrode on the first element and the second element; and forming a second protection layer adapted to cover the first protection layer, the electrode and the gallium arsenide substrate exposed for the groove.

Description

technical field [0001] The present invention relates to a semiconductor device and a manufacturing method thereof, and in particular to a compound semiconductor device formed by using a gallium arsenide substrate and a manufacturing method thereof, wherein the components containing conductive materials have preferable electrical stress performance . Background technique [0002] Gallium arsenide material is one of many known compound semiconductor materials. It has high electron mobility (about six times that of traditional silicon materials), high saturation drift speed and semi-insulation, so it is suitable for the production of high-speed devices. In addition, gallium arsenide materials also have the characteristics of high output power, low power consumption, and low noise, so they are also suitable for the production of high-frequency communication components to replace known low-frequency silicon communication components and meet the needs of today's communications and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/00H01L23/482H01L21/77H01L21/60
Inventor 彭国瑞赵传珍刘慈祥
Owner RICHWAVE TECH CORP
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