IGBT (insulated gate bipolar transistor) drive circuit
A bipolar transistor, driving circuit technology, applied in emergency protection circuit devices, electrical components, electronic switches, etc., can solve the problem of limited driving capability of photoelectric isolator PC929
Inactive Publication Date: 2013-06-26
SHENZHEN INVT ELECTRIC
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Problems solved by technology
[0003] However, due to the limited driving capability of the opto-isolator PC929 itself, the above-mentioned IGBT driving circuit can only be applied to small-capacity IGBT driving
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[0021] The technical solution in the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.
[0022] see figure 1 , figure 1 It is a structural schematic diagram of an insulated gate bipolar transistor driving circuit provided by the present invention. Such as figure 1 As shown, the driver circuit can include:
[0023] Photoelectric isolator PC929-100, its pins 12 and 13 are electrically connected to the positive pole of the constant voltage power supply, and pins 10 and 14 are electrically connected to the negative pole of the constant voltage power supply;
[0024] A voltage di...
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The invention provides an IGBT (insulated gate bipolar transistor) drive circuit, comprising an optoelectronic isolator and a bleeder circuit, wherein pins (12 and 13) of the optoelectronic isolator PC929 are connected with the positive pole of a constant-voltage source and pins (10 and 14) of the optoelectronic isolator PC929 are connected with the negative pole of the constant-voltage source; two ends of the bleeder circuit are respectively connected with the positive pole and negative pole of the constant-voltage source; a pin (11) of the optoelectronic isolator PC929 is connected with a grid of a base (Q1) and a grid of a base (Q2) by a current-limiting resistor; a collector of the triode (Q1) is connected with the positive pole of the constant-voltage source and a collector of the triode (Q2) is connected with the negative pole of the constant-voltage source; signals output by an emitter of the triode (Q1) are taken as drive signals which are used for switching on the IGBT, and signals output by an emitter of the triode (Q2) are taken as drive signals which are used for switching off the IGBT; and a protective circuit is respectively connected with the positive pole and negative pole of the constant-voltage source and used for receiving collector-emitter voltages (Vce) of the IGBT, and when the Vce reaches the preset value, high levels are input into the optoelectronic isolator by one pin (9) of the optoelectronic isolator. The IGBT drive circuit is suitable for high-capacity IGBT drive and has a Vce protection function.
Description
technical field [0001] The invention relates to the field of power electronics, in particular to an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) drive circuit. Background technique [0002] In inverters, lighting circuits, traction drives, uninterruptible power systems (Uninterruptible Power System, UPS) and other power electronic devices, IGBT is the main power switching device, and its work (including drive and protection) reliability will directly affect the entire The reliability of the device, so many different drive circuits have appeared in the IGBT drive industry. Among them, a typical IGBT driving circuit is to use the output of the photoelectric isolator PC929 to directly drive the IGBT, that is, to directly input the output of the photoelectric isolator PC929 to the gate of the IGBT to drive the IGBT. [0003] However, due to the limited driving capability of the photoelectric isolator PC929 itself, the above-mentioned IGBT driving ...
Claims
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IPC IPC(8): H03K17/567H02H7/20
Inventor 吴建安
Owner SHENZHEN INVT ELECTRIC