Semiconductor device
A semiconductor and conductive technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve problems such as latch breakdown, and achieve the effect of low turn-on resistance and high current
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no. 1 Embodiment approach
[0046] figure 1 It is a schematic cross-sectional view of the semiconductor device of the first embodiment.
[0047] figure 2 It is a schematic diagram illustrating the planar layout of main parts of the semiconductor device. Also, in each figure, for the Figure 15 The same parts are given the same reference numerals.
[0048] The semiconductor layer includes p + type collector layer 11, n - type base layer 12, p-type base layer 13, and n + type semiconductor layer 100.
[0049] no + The type semiconductor layer 100 is called an emitter layer in the case of an IGBT, and is called a source layer in a case of a MOSFET, but the basic functions of the emitter layer and the source layer to inject electrons through the n-channel are the same. no + The n-type impurity concentration ratio of the n-type semiconductor layer 100 is n - Type base layer 12 is high.
[0050] no - type base layer 12 located at p + type collector layer 11. The p-type base layer 13 is set at n ...
no. 2 Embodiment approach
[0087] Figure 6 It is a schematic perspective view of the semiconductor device of 2nd Embodiment. exist Figure 6 In , the second main electrode 22 is indicated by a dashed-two dotted line for easy observation.
[0088] The p-type base layer 13 of this embodiment has a channel region 13a and a contact region 13b. Other configurations and obtained effects are the same as those of the above-mentioned first embodiment.
[0089] channel region 13a with n + Type semiconductor layer 100 with the same width and length overlaps in n + type semiconductor layer 100 directly below. Contact area 13b is not covered by n + Type semiconductor layer 100 is covered and pulled out upward, and is in contact with the second main electrode 22 .
[0090] Therefore, the potential of the second main electrode 22 is applied to the p-type base layer 13 , and the potential of the p-type base layer 13 can be stabilized. Accordingly, it is possible to prevent the influence of the unstable potenti...
no. 3 Embodiment approach
[0092] Figure 7 It is a schematic cross-sectional view of the semiconductor device of the third embodiment.
[0093] The semiconductor device of this embodiment has a MOSFET structure, and in figure 1 In the semiconductor device of the first embodiment shown, p + type collector layer 11 replaced by n + Type drain layer 41 structure.
[0094] On the other hand, when a desired gate potential is applied to the gate electrode 18 in a state where a high potential is applied to the first main electrode 21 and a low potential is applied to the second main electrode 22, the p-type base layer 13 and the gate An inversion layer (n-channel) is formed near the boundary surface of the electrode insulating film 17a. For example, a ground potential or a negative potential is applied to the second main electrode 22 , and a positive gate potential is applied to the gate electrode 18 . A positive potential higher than the gate potential is applied to the first main electrode 21 .
[0095...
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