A kind of fabrication method of graphene vertical interconnection structure
A technology of vertical interconnection and fabrication method, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of poor uniformity and repeatability of carbon nanotubes, and the electrical performance is difficult to meet high-frequency and high-speed signal transmission. High conductivity, conducive to the transmission of high-frequency and high-speed electrical signals, and the effect of improving the performance of electrical signal transmission
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Embodiment 1
[0034]1) First, if Figure 1a As shown, a substrate 110 is provided, and via holes 120 are formed. The substrate can be a semiconductor material, such as silicon, germanium and other simple semiconductors, or compound semiconductors such as gallium arsenide, indium phosphide, gallium nitride, etc.; it can also be a metal material, such as titanium, molybdenum, nickel, chromium, tungsten, copper, etc. Or its alloy; it can also be an insulating material such as glass or quartz. The substrate is generally circular, with notches or alignment edges made to distinguish or align crystal phases. Common substrate diameters are 50 mm, 100 mm, 200 mm, 300 mm, 450 mm, etc. Substrates can be standard thickness, ranging from 400 microns to 1000 microns, or thinned, ranging from 10 microns to 400 microns. The substrate 110 has a first substrate surface 111 and a second substrate surface 112, and the first substrate surface 111 and / or the second substrate surface 112 may have completed semic...
Embodiment 2
[0041] 1) First, if Figure 2a As shown, a substrate 110 is provided and blind vias 130 are formed. The substrate can be a semiconductor material, such as silicon, germanium and other simple semiconductors, or compound semiconductors such as gallium arsenide, indium phosphide, gallium nitride, etc.; it can also be a metal material, such as titanium, molybdenum, nickel, chromium, tungsten, copper, etc. Or its alloy; it can also be an insulating material such as glass or quartz. The substrate is generally circular, with notches or alignment edges made to distinguish or align crystal phases. Common substrate diameters are 50 mm, 100 mm, 200 mm, 300 mm, 450 mm, etc. Substrates can be standard thickness, ranging from 400 microns to 1000 microns, or thinned, ranging from 10 microns to 400 microns. The substrate 110 has a first substrate surface 111 and a second substrate surface 112, and the first substrate surface 111 and / or the second substrate surface 112 may have completed sem...
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