Ultralow capacitance transient voltage suppression device and manufacturing method thereof

Abstract

The invention provides an ultralow capacitance transient voltage suppression (TVS) device and a manufacturing method thereof. The ultralow capacitance transient voltage suppression device comprises a P+ semiconductor substrate, P- epitaxial layers which are positioned on the P+ semiconductor substrate, P+ isolation regions which are formed in the P- epitaxial layer and extend to the P+ semiconductor substrate, TVS tube N regions which are positioned in the P+ isolation regions, TVS tube P regions which are abreast with the TVS tube N regions and positioned in the P+ isolation regions, N- traps which are positioned in the P- epitaxial layers among the P+ isolation regions, upper diode P regions which are positioned in the N- traps, upper diode N regions which are abreast with the upper diode P regions and positioned in the N- traps, lower diode N regions which are positioned in the P- epitaxial layers among the P+ isolation regions, lower diode P regions which are abreast with the lower diode N regions and positioned in the P- epitaxial layers, and an interconnection structure which is positioned on the P- epitaxial layers. In the ultralow capacitance TVS device, upper diodes, lower diodes and TVS tubes are integrated on the same chip, so that low cost and high performance are realized.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices and semiconductor technology, in particular to an ultra-low capacitance transient voltage suppression device and a manufacturing method thereof. Background technique [0002] Transient voltage suppressor diode (TVS, Transient Voltage Suppressor), also known as clamping diode, is a high-efficiency circuit protection device commonly used at present. Its shape is the same as that of ordinary diodes, but it can absorb surge power up to several thousand watts. , its main feature is that under reverse application conditions, when it is subjected to a high-energy large pulse, its working impedance will immediately drop to an extremely low conduction value, thereby allowing a large current to pass, while clamping the voltage at a predetermined level, generally The response time is only 10 -12 seconds, so it can effectively protect the precision components in the electronic circuit from bein...

AI Technical Summary

Problems solved by technology

[0014] Due to the silicon integration process and the yield rate, the ultra-low capacitance TVS devices formed by the above-mentioned combination are all in the form of separate device combination packaging, that is, the upper and lower diodes 11, 12 and TVS tube 13 are all obtained through different layouts and processes. To achieve, and then combined together through packaging, this technology is not only costly, but also the performance of the device will be affected by the properties of the connecting wire material

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