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Semiconductor device

A technology of semiconductors and components, applied in the field of semiconductor components with a super interface structure, capable of solving problems such as voltage collapse of semiconductor components 10

Active Publication Date: 2014-03-05
SINOPOWER SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the breakdown voltage that the superinterface structure 28 between the active device region 30 and the peripheral region 32 can withstand is smaller than the breakdown voltage that the superinterface structure 28 in the active device region 30 can withstand, so that the withstand voltage capability of the semiconductor device 10 is limited. The limitation of the superinterface structure 28 between the active device area 30 and the peripheral area 32 cannot be determined by the transistor components in the active device area 30
Moreover, the superinterface structure 28 between the active device region 30 and the peripheral region 32 has a right-angle structure, so it is easy to accumulate charges at the corners and generate a high electric field, so it is also easy to cause voltage collapse of the semiconductor device 10

Method used

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  • Semiconductor device
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Embodiment Construction

[0044] Please refer to image 3 , image 3 It is a schematic cross-sectional view of a semiconductor component in a preferred embodiment of the present invention. Such as image 3As shown, the semiconductor device 100 of this embodiment includes a substrate 102 and a superjunction structure 104 . The substrate 102 has a first conductivity type, and defines an active device region 106 and a peripheral region 108 surrounding the active device region 106, wherein the active device region 106 is used for setting transistor devices with switching functions, and the peripheral region 108 is used for setting The structure of the transistor device is protected to avoid voltage collapse of the semiconductor device 100 . The superinterface structure 104 is disposed on the N-type substrate 102, and the superinterface structure 104 includes an epitaxial layer 110 having a first conductivity type and a plurality of semiconductor layers 112 having a second conductivity type, wherein any ...

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Abstract

A semiconductor device includes an epitaxial layer having a first conductive type, and at least one first semiconductor layer and a second semiconductor layer having a second conductive type. The first semiconductor layer is disposed in the epitaxial layer of a peripheral region, and has an arc portion, and a first strip portion and a second strip portion extended from two ends of the arc portion. The first strip portion points to an active device region, and the second strip portion is perpendicular to the first strip portion The second semiconductor layer is disposed in the epitaxial layer of the peripheral region between the active device region and the second strip portion, and the second semiconductor has a sidewall facing and parallel to the first semiconductor layer.

Description

technical field [0001] The invention relates to a semiconductor component, in particular to a semiconductor component with a superjunction structure. Background technique [0002] In metal oxide semiconductor (MOS) components, the on-resistance RDS(on) between the drain and source is proportional to the power consumption of the component, so reducing the on-resistance RDS(on) can Reduce the power consumed by MOS components. In the on-resistance RDS(on), the resistance value caused by the epitaxial layer used for withstand voltage accounts for the highest proportion. Although increasing the doping concentration of the conductive substance in the epitaxial layer can increase the resistance value of the epitaxial layer, the function of the epitaxial layer is to withstand high voltage. If the doping concentration is increased, the breakdown voltage of the epitaxial layer will be reduced, thereby reducing the withstand voltage capability of the metal oxide semiconductor device....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/78
CPCH01L29/0634H01L29/7811H01L29/0696H01L29/0619H01L29/1095
Inventor 林伟捷
Owner SINOPOWER SEMICON