Unlock instant, AI-driven research and patent intelligence for your innovation.

Solar cell

A solar cell and semiconductor technology, applied in the field of solar cells, can solve the problem of low probability of current collection

Active Publication Date: 2014-11-19
Q-电池公司
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this arrangement is technologically simpler than the two previously described solar cell designs, it has the disadvantage of a very low probability of current collection because charge carriers generated by incident light on the front side of the semiconductor wafer will first have to pass through A relatively thick base layer is required to be collected by the emissive layer placed on the backside

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solar cell
  • Solar cell
  • Solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] figure 1 A solar cell is shown with a semiconductor wafer 1 comprising a base layer 3 . Advantageously, the base layer 3 is exposed from the semiconductor wafer 1 in such a way that it is rendered n-type semiconductor by phosphorous doping. The semiconductor wafer 1 may be, for example, from a silicon wafer formed by the Czochralski process. The front side 2 of the semiconductor wafer 1 is textured in order to increase the light trapping probability and thus increase the efficiency of the solar cell. texturing in the Figure 1 to Figure 4 shown schematically by a surface with a "zigzag" pattern.

[0035] On the base layer 3 of the semiconductor wafer 1 , an emission structure 6 is formed, which comprises a front emission layer 61 , a back emission layer 62 , and a transmission region 60 . In the embodiment described here, for example with a phosphorus-doped n-type base layer 3 , the emitter structure 6 is formed p-type, preferably by boron doping.

[0036] The tran...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to Solar cell with a semiconductor wafer (1) comprising a light incidence facing front side (2) with a base electrode (4), which is connected to a base layer (3) of the semiconductor wafer (1), and a front side (2) opposite to the back side (5) with an emitter electrode (7), which is connected to an emitter structure (6) of the semiconductor wafer (1), characterized by that the emitter structure (6) comprises a front side emitter layer (61) arranged on the front side (2) of the semiconductor wafer (1).

Description

technical field [0001] The invention relates to a solar cell with double-side contact function. Background technique [0002] In wafer-based solar cells made of semiconductor wafers, such as silicon, the semiconductor wafer material is used as an absorber material to absorb light that falls on the front side facing the incident light and convert it into electrical energy . When the semiconductor wafer comprises a sufficiently electrically passivated surface, recombination losses of the absorber material in the solar cell have a significant effect and thus limit the energy conversion efficiency. [0003] Currently, the wafer-based silicon solar cell market is dominated by double-sided contact solar cells, which have a p-type substrate layer and an n-type emitter structure. The p-type base layer is typically produced by doping the semiconductor wafer with boron, while the n-type emitting structure thereon is conventionally formed by doping phosphorus. The emitter structure ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/068
CPCH01L31/02245H01L31/0236Y02E10/547H01L31/068H01L31/022425H01L31/02363
Inventor 彼得·恩格尔哈特
Owner Q-电池公司