Optical proximity correction method of covered shape

Abstract

The invention discloses an optical proximity correction method of a covered shape. The method comprises steps that: a set of detection patterns are designed; each covering dimension measured value of a current-layer photoresist patterns upon a previous-layer etching patterns is measured; according to the covering dimension measured values, and with a photo-etching technology and electrical properties, covering dimension specification values of the current-layer photoresist patterns upon the previous-layer etching patterns are obtained; according to the covering dimension specification values, photo-etching dimensions of the line patterns on the current layer is adjusted, such that the covering dimensions of the current-layer line patterns covering the previous-layer line patterns with different photo-etching dimensions are no smaller than the covering dimension specification values. With the method provided by the invention, the covering capacity of the current-layer photoresist patterns upon the previous-layer etching patterns is improved; it is effectively ensured that the covering dimensions corresponding to the previous-layer etching line patterns with different dimensions are larger than the covering dimension specification values. Therefore, the subsequent photo-etching technology and the electrical properties can satisfy the requirements of technologies.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit manufacturing process method, in particular to an optical proximity effect correction method for covering topography. Background technique [0002] In the existing Optical Proximity Correction (OPC) method, for the accuracy of OPC modeling, the modeling will be carried out through the graphic data collected on the flat sheet. The flat sheet refers to only different film layers, but no The silicon chip of the underlying pattern, that is, the silicon chip only has a flat film structure and does not have a stepped pattern structure. However, the silicon wafers of general products often include the underlying graphics structure, and the existing OPC method cannot reflect the impact of the underlying graphics' morphology on OPC modeling, so the OPC model itself lacks the underlying graphics' morphology. technical coverage. [0003] Such as figure 1 As shown, it is a top view structure diagram of...

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Problems solved by technology

[0005] Therefore, the defect of adopting the optical proximity effect correction method of the existing coverage topography is that when the photolithography size of each front layer line pattern of the current layer etching pattern changes, the coverage ability of the current layer photoresist pattern to the front layer etching pattern will be reduced. become worse, and cannot effectively control the coverage size B corresponding to the lithography size of different front-layer line patterns, which will make the actual value of part of the coverage size B smaller. When the coverage size B is smaller than a certain value, it will affect the subsequent The photolithographic process and electrical performance of the circuit

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