Unlock instant, AI-driven research and patent intelligence for your innovation.

Method and system for simulation of diffusion resistor

A technology of diffusion resistance and simulation method, which is applied in the direction of measuring resistance/reactance/impedance, measuring electrical variables, and electrical digital data processing, etc., and can solve the problems of low simulation accuracy and large deviation of simulation results

Active Publication Date: 2013-05-29
BCD (SHANGHAI) MICRO ELECTRONICS LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the inventor found that when using the three-terminal resistance model to simulate the diffusion resistance including the third terminal, the simulation results have large deviations and the simulation accuracy is low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and system for simulation of diffusion resistor
  • Method and system for simulation of diffusion resistor
  • Method and system for simulation of diffusion resistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0061] The voltage coefficient of the three-terminal resistance model shown in Equation 1 reflects the modulation effect of the third end of the diffuser, but does not reflect the speed saturation effect of the diffuser under high potential, so when the voltage across the diffuser changes, the simulation of the diffuser The result will be very biased.

[0062] Such as figure 1 , Is the comparison diagram of the simulation result and the measurement result of the diffusion resistance when the scanning voltage at one end of the diffusion resistance changes from 0 to 30V, and the second and third ends are grounded; figure 2 , Is the comparison diagram of the simulation result and the measurement result of the diffusion resistance when the scanning voltage at the first end of the diffusion resistance changes from 20V to 30V, and the second and third ends are grounded. by figure 1 with figure 2 It can be seen that when the voltage difference between the two ends of the diffuser is th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method and a system for simulation of a diffusion resistor. The method comprises: determining a first order voltage coefficient and a second order voltage coefficient of modulation effects of a third end of the diffusion resistor; determining a first order voltage coefficient and a second order voltage coefficient of velocity saturation effects of the diffusion resistor;establishing a simulation model of the diffusion resistor according to the first order voltage coefficient and the second order voltage coefficient of the modulation effects of the third end of the diffusion resistor as well as the first order voltage coefficient and the second order voltage coefficient of the velocity saturation effects; and simulating the diffusion resistor according to the simulation model.

Description

Technical field [0001] The present invention relates to the field of circuits, in particular to a simulation method and system of diffusion resistance. Background technique [0002] Resistor is one of the commonly used devices in integrated circuits. Commonly used resistors include polycrystalline resistors and diffusion resistors. [0003] In the prior art, when simulating the diffusion resistance including the third terminal, the three-terminal resistance model shown in the following formula 1 is generally used as the resistance model of the diffusion resistance. [0004] R=R0*(1+pvc1*abs((v(n3,n1)+v(n3,n2)) / 2)+pvc2*(v(n3,n1)+v(n3,n2)) / 2* (v(n3,n1)+v(n3,n2)) / 2) (1) [0005] However, the inventor found that when the three-terminal resistance model is used to simulate the diffusion resistance including the third terminal, the simulation result has a large deviation and the simulation accuracy is low. Summary of the invention [0006] In view of this, the technical problem to be solve...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50G01R27/14
Inventor 张磊兢胡林辉
Owner BCD (SHANGHAI) MICRO ELECTRONICS LTD