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Micro-crystalline thin film transistor, display device including the same and manufacturing method thereof

A technology for thin film transistors and display devices, which is applied in the manufacture of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., can solve problems such as contrast deterioration of display devices

Inactive Publication Date: 2012-07-04
LG DISPLAY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Leakage current causes contrast degradation of display device

Method used

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  • Micro-crystalline thin film transistor, display device including the same and manufacturing method thereof
  • Micro-crystalline thin film transistor, display device including the same and manufacturing method thereof
  • Micro-crystalline thin film transistor, display device including the same and manufacturing method thereof

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Embodiment Construction

[0033] Reference will now be made in detail to illustrative embodiments of the present invention, preferred embodiments of which are illustrated in the accompanying drawings.

[0034] image 3 is a cross-sectional view illustrating a microcrystalline silicon thin film transistor according to a first embodiment of the present invention.

[0035] refer to image 3 , the gate 112 is formed on the substrate 110 . The gate 112 is formed of a conductive material such as metal. A gate insulating layer 116 is formed on the gate electrode 112 .

[0036] The active layer 120 is formed on the gate insulating layer 116 . Although not shown in the drawings, the active layer 120 has an in-plane pattern corresponding to the gate electrode 112 . The active layer 120 is made of microcrystalline silicon formed by crystallizing amorphous silicon using an infrared laser. The etch stopper 122 is formed on the active layer 120 and serves to prevent the active layer 120 corresponding to the ch...

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PUM

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Abstract

The invention provides a micro-crystalline thin film transistor, a display device including the same and a manufacturing method thereof. The display device includes: a substrate; gate and data lines crossing each other on the substrate to define a pixel region; a thin film transistor that is connected to the gate and data lines, and includes a gate electrode, an active layer made of micro-crystalline silicon, and source and drain electrodes which are sequentially formed; a passivation layer on the thin film transistor; and a first electrode in the pixel region on the passivation layer and connected to the drain electrode, wherein a first overlap width between the drain electrode and the gate electrode is less than a second overlap width between the source electrode and the gate electrode.

Description

technical field [0001] The present invention relates to a microcrystalline thin film transistor, more particularly to a microcrystalline thin film transistor, a display device including the microcrystalline thin film transistor and a manufacturing method thereof. Background technique [0002] This application claims priority from Korean Patent Application No. 10-2010-0125110 filed on Dec. 8, 2010, which is hereby incorporated by reference for all purposes as if fully set forth herein. [0003] Until recently, display devices typically used cathode ray tubes (CRTs). Currently, various types of flat panel displays such as liquid crystal displays (LCDs), plasma display panels (PDPs), field emission displays (FEDs), and organic electroluminescence displays (OLEDs) are being developed as substitutes for CRTs. A lot of hard work and research. As these flat panel displays, an active matrix type display including a plurality of pixels arranged in a matrix and each pixel including ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/41H01L27/12H01L21/28H01L21/84
CPCH01L21/268H01L27/1288H01L29/04H01L27/124H01L29/41733H01L29/42384H01L29/78696H10K59/1213H10K59/131
Inventor 金杞泰金圣起李洪九裵俊贤
Owner LG DISPLAY CO LTD