Actinic ray-sensitive or radiation-sensitive resin composition, and resist film and pattern forming method using the same

A resin composition, radiation-sensitive technology, applied in the field of resist film and pattern formation, capable of solving problems such as insufficient technology

Inactive Publication Date: 2012-07-04
FUJIFILM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In the latest generation of line width patterning below 45nm, in the case of applying the dipping process, the above-mentioned related technologies are not sufficient, and more improvements are needed in terms of line width roughness (LWR) and depth of focus (DOF)

Method used

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  • Actinic ray-sensitive or radiation-sensitive resin composition, and resist film and pattern forming method using the same
  • Actinic ray-sensitive or radiation-sensitive resin composition, and resist film and pattern forming method using the same
  • Actinic ray-sensitive or radiation-sensitive resin composition, and resist film and pattern forming method using the same

Examples

Experimental program
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Embodiment

[0711] The present invention is described in more detail below with reference to Examples, but the present invention should not be construed as being limited thereto.

[0712] Synthesis Example 1: Synthesis of Compound (PA-1)

[0713] Under a stream of nitrogen, a mixture of 8.35 g (26.4 mmol) of 1,1,2,2,3,3-hexafluoropropane-1,3-disulfonyl fluoride and 15 ml of THF was cooled on ice and heated at 60 A mixed solution of 2.77 g (27.7 mmol) of 1-methylpiperazine and 30 ml of triethylamine was added dropwise thereto within minutes. The resulting solution was stirred under ice-cooling for 1 hour and further at room temperature for 1 hour, and 3.94 g (26.4 mmol) of trifluoromethanesulfonamide was added thereto. The mixture was stirred at 80°C for 12 hours, and 100 ml of chloroform was added. The organic layer was washed with water and dried over sodium sulfate, and 20 ml of methanol and 50 ml of 1.5N aqueous hydrochloric acid were added. The precipitated white solid was filtered...

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Abstract

An actinic ray-sensitive or radiation-sensitive resin composition including: (PA) a compound having a proton acceptor functional group and undergoing decomposition upon irradiation with an actinic ray or radiation to generate a compound reduced in or deprived of proton acceptor property or changed to be acidic from being proton acceptor-functioning, wherein a molar extinction coefficient e of the compound (PA) at a wavelength of 193 nm as measured in acetonitrile solvent is 55,000 or less, and a pattern forming method using the composition are provided

Description

technical field [0001] The present invention relates to actinic ray-sensitive or radiation-sensitive resin compositions for use in the manufacture of semiconductor devices such as ICs, in the manufacture of liquid crystal devices or circuit boards such as thermal heads, and furthermore in other photoprocessing methods, It also relates to a pattern forming method using the composition. In more detail, the present invention relates to an actinic ray-sensitive or radiation-sensitive resin composition suitable when extreme ultraviolet rays, electron beams, etc. having a wavelength of 250 nm or less are used as a light source, and resist film and pattern formation each using the composition method. Background technique [0002] Chemically amplified resists generate acid in exposed areas when irradiated with radiation such as deep ultraviolet light, and by a reaction using said acid as a catalyst, cause solubility of the developer in areas irradiated with radiation and solubility...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004C08F20/10G03F7/039H01L21/027
CPCG03F7/0045G03F7/2041C08F20/10G03F7/0046G03F7/0397G03F7/0392H01L21/0271
Inventor 涉谷明规山口修平片冈祥平白川三千纮加藤贵之丹吴直纮
Owner FUJIFILM CORP
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