System for detecting single-particle transient current pulse

A single-event pulse and single-event transient technology, applied in the measurement of pulse characteristics, etc., can solve the problems of not being able to capture the original form of SET current pulses, unfavorable capture of SET transient current pulses, and relying on the reliability of logic circuits, etc.
CN102565545AInactive Publication Date: 2012-07-11INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Publication Date
2012-07-11
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides a system for detecting a single-particle transient current pulse, which includes an irradiation device used for irradiating a to-be-measured area of a device, and an oscilloscope used for capturing signals of single-particle pulse current. Through adopting the method and the equipment provided by the invention, the pulse shape of original single-particle transient current can be captured, the pulse rise time, pulse width, pulse amplitude and other parameters of the single-particle current can be measured visually, further, the node state of a characterization circuit can be analyzed through the single-particle transient current pulse, and the width distribution of the single-particle current pulse in a specific circuit can be obtained, so that the reinforcement reference of the circuit for single-particle radioresistance can be obtained.
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Description

technical field

[0001] The invention relates to pulse collection and detection, in particular to a system for detecting single-particle transient pulse current waveforms. Background technique

[0002] The phenomenon that a single heavy ion or proton with a certain energy is injected into a semiconductor device or integrated circuit, resulting in performance degradation or functional failure of the semiconductor device or integrated circuit, is collectively referred to as single event effect (SEE). SEE can be subdivided into single event transient (single event transient, SET) effect, single event upset (single event upset, SEU) effect, single event latch-up (single event latch-up, SEL) effect, single event disturbance ( Single event disturbance (SED) effect, single event functional interrupt (single event functional interrupt, SEFI) effect, single event gate breakdown (single event gate rupture, SEGR) effect, single event burnout (single event burnout, SEB) effect, etc. [...

Claims

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