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System for detecting single-particle transient current pulse

A single-event pulse and single-event transient technology, applied in the measurement of pulse characteristics, etc., can solve the problems of not being able to capture the original form of SET current pulses, unfavorable capture of SET transient current pulses, and relying on the reliability of logic circuits, etc.

Inactive Publication Date: 2012-07-11
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
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Problems solved by technology

However, this method has great limitations. It cannot capture the original form of the SET current pulse in the true sense. It can only detect the width and amplitude of the SET current pulse within a range, and it strongly depends on the reliability of the logic circuit. , Different logic circuits or different units of the same logic circuit will have different driving capabilities, which is very unfavorable for the capture of SET transient current pulses

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  • System for detecting single-particle transient current pulse
  • System for detecting single-particle transient current pulse
  • System for detecting single-particle transient current pulse

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Embodiment Construction

[0023] In order to make the object, technical solution and advantages of the present invention clearer, the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0024] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0025] The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Of course, they are only examples and are not int...

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Abstract

The invention provides a system for detecting a single-particle transient current pulse, which includes an irradiation device used for irradiating a to-be-measured area of a device, and an oscilloscope used for capturing signals of single-particle pulse current. Through adopting the method and the equipment provided by the invention, the pulse shape of original single-particle transient current can be captured, the pulse rise time, pulse width, pulse amplitude and other parameters of the single-particle current can be measured visually, further, the node state of a characterization circuit can be analyzed through the single-particle transient current pulse, and the width distribution of the single-particle current pulse in a specific circuit can be obtained, so that the reinforcement reference of the circuit for single-particle radioresistance can be obtained.

Description

technical field [0001] The invention relates to pulse collection and detection, in particular to a system for detecting single-particle transient pulse current waveforms. Background technique [0002] The phenomenon that a single heavy ion or proton with a certain energy is injected into a semiconductor device or integrated circuit, resulting in performance degradation or functional failure of the semiconductor device or integrated circuit, is collectively referred to as single event effect (SEE). SEE can be subdivided into single event transient (single event transient, SET) effect, single event upset (single event upset, SEU) effect, single event latch-up (single event latch-up, SEL) effect, single event disturbance ( Single event disturbance (SED) effect, single event functional interrupt (single event functional interrupt, SEFI) effect, single event gate breakdown (single event gate rupture, SEGR) effect, single event burnout (single event burnout, SEB) effect, etc. [...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R29/02
Inventor 梅博毕津顺韩郑生罗家俊
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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